Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2

被引:16
作者
Miyatake, Yuto [1 ]
Makino, Kotaro [2 ]
Tominaga, Junji [2 ]
Miyata, Noriyuki [2 ]
Nakano, Takashi [2 ]
Okano, Makoto [2 ]
Toprasertpong, Kasidit [1 ]
Takagi, Shinichi [1 ]
Takenaka, Mitsuru [1 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 1130032, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba 3058568, Japan
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
Phase shifters; Phase change materials; Optical variables control; Optical refraction; Optical losses; Silicon; Photonic band gap; Mid-infrared (MIR); non-volatile; phase-change material (PCM); phase shifter; CIRCUITS;
D O I
10.1109/TED.2023.3235865
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An optical phase shifter based on phase-change materials (PCMs) is a promising building block of quantum photonic integrated circuits (QPICs) operating at mid-infrared (MIR) wavelengths on a Si photonics platform. In this article, we propose a record low-loss non-volatile PCM phase shifter operating at MIR wavelengths based on Ge2Sb2Te3S2 (GSTS), which is a new Se-free widegap PCM. On the basis of the refractive index and extinction coefficient spectra measured by spectroscopic ellipsome-try, we show that GSTS has excellent material properties for optical phase shifters. By using GSTS in the MIR range, the optical absorption of a PCM phase shifter can be consider-ably reduced. We achieved an optical loss of 0.29 dB for a pi phase shift, which is the lowest loss ever reported for a PCM phase shifter integrated with a Si waveguide. We also demonstrate the non-volatile resonance wavelength tuning of a microring resonator (MRR) with a GSTS phase shifter and the optically induced phase transition of a GSTS phase shifter based on laser irradiation.
引用
收藏
页码:2106 / 2112
页数:7
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