A study on mechanism of sapphire polishing using the diamond abrasive by molecular dynamics

被引:18
|
作者
Sheng, Chong [1 ]
Zhong, Min [1 ]
Xu, Wenhu [1 ]
机构
[1] Nanchang Univ, Sch Mechatron Engn, Key Lab Tribol, Nanchang 330031, Jiangxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Sapphire; polishing; molecular dynamics; removed atoms; surface and subsurface; MATERIAL REMOVAL; PLANE; CMP; BEHAVIOR; GAN; SIMULATION; STRENGTH; SILICA; COPPER; WATER;
D O I
10.1080/15376494.2021.2012856
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polished sapphire has been widely used because of its superior mechanical and physical characteristics. However, the polishing process of sapphire is still unclear and the processing effects need to be improved. Therefore, the polishing process of sapphire with diamond abrasive particles was studied by molecular dynamics method. The behavior of diamond removing sapphire material in polishing process was researched. The effects of the polishing speed, depth, and the abrasive size were investigated in the aspects of polishing force, surface topography, subsurface damage, removed atoms, temperature distribution and average friction coefficient. The outcomes indicated that the surface temperature of sapphire was higher with the rising polishing velocity, but the subsurface defect of sapphire was deeper. Larger indentation depths resulted in higher forces and temperatures, deeper grooves, more removed atoms and bigger average friction coefficients, but poor polished subsurface. Bigger abrasives gained lower friction coefficients and higher numbers of removed atoms. It was found that both good polishing efficiency and quality are obtained under the speed 150 m/s, the polishing depth 15 angstrom and the abrasive particle radius 20 angstrom. This study is helpful to improving the sapphire polishing effects and understanding its polishing process.
引用
收藏
页码:319 / 331
页数:13
相关论文
共 50 条
  • [1] Molecular dynamics investigations on polishing of a silicon wafer with a diamond abrasive
    Agrawal, Paras M.
    Raff, L. M.
    Bukkapatnam, S.
    Komanduri, R.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 100 (01): : 89 - 104
  • [2] Molecular dynamics investigations on polishing of a silicon wafer with a diamond abrasive
    Paras M. Agrawal
    L. M. Raff
    S. Bukkapatnam
    R. Komanduri
    Applied Physics A, 2010, 100 : 89 - 104
  • [3] The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation
    Houfu Dai
    Haixia Yue
    Yang Hu
    Ping Li
    Tribology Letters, 2021, 69
  • [4] The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation
    Dai, Houfu
    Yue, Haixia
    Hu, Yang
    Li, Ping
    TRIBOLOGY LETTERS, 2021, 69 (02)
  • [5] Molecular dynamics study of the removal mechanism of SiC in a fixed abrasive polishing in water lubrication
    Zhou, Piao
    Li, Jun
    Wang, Zikun
    Chen, Jiapeng
    Li, Xue
    Zhu, Yongwei
    CERAMICS INTERNATIONAL, 2020, 46 (16) : 24961 - 24974
  • [6] Mechanism of polishing lutetium oxide single crystals with polyhedral diamond abrasive grains based on molecular dynamics simulation
    Bi, Guangyue
    Li, Yuzhu
    Lai, Min
    Fang, Fengzhou
    APPLIED SURFACE SCIENCE, 2023, 616
  • [7] Molecular Dynamics Study of Sapphire Polishing Considering Chemical Products
    Liu, Xianghong
    Zhong, Min
    Xu, Wenhu
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (12)
  • [8] Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process
    Zhou, Piao
    Shi, Xunda
    Li, Jun
    Sun, Tao
    Zhu, Yongwei
    Wang, Zikun
    Chen, Jiapeng
    CERAMICS INTERNATIONAL, 2019, 45 (12) : 14614 - 14624
  • [9] Material removal and wear mechanism in abrasive polishing of SiO2/SiC using molecular dynamics
    Van-Thuc Nguyen
    Fang, Te-Hua
    CERAMICS INTERNATIONAL, 2020, 46 (13) : 21578 - 21595
  • [10] Molecular dynamics investigation of nano-polishing on silicon carbide substrate with rough topography using a rotating diamond abrasive
    Wu, Bing
    Sun, Yunyun
    Tan, Henry
    Wu, Shijing
    MATERIALS TODAY COMMUNICATIONS, 2024, 41