Numerical Study to Improve the Performance Parameters of Quantum Dot Perovskite Solar Cell

Quantum Dot Solar Cells are becoming a distinctly predominant option for conventional solar cells, transmuting the field of solar cells in recent years and promoting the device's performance. A novel architecture involving PbS-tetra-butyl ammonium iodide (PbS-TBAI) quantum dot (QD) in hybrid with perovskite layer is proposed in this work. The designed QD solar cell has an architecture of FTO/tin(IV)oxide(SnO2)/Tungsten di-sulphide (WS2)/PbS-TBAI/Methyl-ammonium lead iodide (CH3NH3PBI3)/Tin(H) Sulphide (SnS)/gold (Au) contacts with an efficiency of 21.09 percent and is simulated and analyzed. CH3NH3PBI3 is utilized as the absorber layer, PbS-tetra-butyl ammonium iodide (PbS-TBAI) is used as a quantum dot layer, SnO2 as the electron transport layer (ETL), WS2 is used as the buffer layer, and SnS as the hole transport layer (HTL). The effects of absorbing layer thickness, buffer layer thickness, operating temperature, defect density of absorber, and quantum dot layer, doping density of active layer were investigated. The cell's quantum efficiency indicates that the PbS-QD solar cell can collect a larger variety of incident light wavelengths across the solar spectrum, and adding a buffer layer of WS2 significantly increases the efficiency. This research effort can serve as a valuable guide in the future fabrication of highly efficient quantum dot perovskite solar cells.