Enhancement of thermoelectric performance in TiNiSbxSn1-x half-Heusler alloys

被引：2
作者：
Gao, Feng [1 ]
Lei, Ying [2 ]
Li, Yu [1 ,3 ,4 ,5 ]
Qiu, Jin [1 ]
Yong, Chao [1 ]
Wang, Nan [1 ]
Song, Guangyuan [1 ]
Hu, Huaichuan [3 ]
机构：
[1] Anhui Univ Technol, Sch Met Engn, Maanshan 243032, Peoples R China
[2] Guizhou Univ, Coll Mat & Met, Guiyang 550025, Peoples R China
[3] Hefei Comprehens Natl Sci Ctr, Inst Energy, Hefei 230041, Peoples R China
[4] Pangang Grp Res Inst Co Ltd, State Key Lab Vanadium & Titanium Resources Compre, Panzhihua 617000, Peoples R China
[5] Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Wuhan 430081, Peoples R China
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2023年 / 323卷
基金：
中国国家自然科学基金;
关键词：
TiNiSn-based half-Heusler; Microwave synthesis; Annealing; Sb doping; Power factor; MICROWAVE SYNTHESIS; FIGURE; MERIT; TINISN;
D O I：
10.1016/j.jssc.2023.124060
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
In this paper, TiNiSn1-xSbx thermoelectric bulks were fabricated by microwave synthesis combined with spark plasma sintering and annealing process. The high density of the samples were confirmed by the physical phase analysis and microstructure characterization of the samples. Through the analysis of the thermoelectric properties of the samples, it was determined that the antimony doping and the annealing process resulted in a sig-nificant improvement in the electrical properties of the TiNiSn-based materials, and allowed the samples to maintain relatively low lattice thermal conductivity. At the same time, the lattice thermal conductivity of all samples is less than 1.7 W m(-1)K(-1) at high temperature. TiNiSn0.965Sb0.035 obtained a maximum power factor of 3125.9 mu Wm(-1)K(-2) at 873 K and a total thermal conductivity of 4.2-4.7 W m(-1)K(-1), with the maximum ZT value of 0.57, which is similar to 86% higher than that of the undoped sample.
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页数：6
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