Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films

Bi2Se3-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery technology. In this work, a novel post-selenization method is employed to prepare n-type Bi2Se3 flexible thin films with highly textured structure. The strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization temperature. The highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of * 290.47 S center dot cm(-1) at 623 K. Correspondingly, a high Seebeck coefficient ([ 110 mu W center dot K-1) is obtained due to the reduced carrier concentration, induced by optimizing vacancy engineering. Consequently, a high power factor of 3.49 mu W center dot cm(-1 center dot)K(-2) at 623 K has been achieved in asprepared highly-bendable Bi2Se3 flexible thin films selenized at 783 K. This study introduces an effective postselenization method to tune the texture structure and vacancies of Bi2Se3 flexible thin films, and correspondingly achieves high thermoelectric performance.