Carrier mobility in organic semiconductors with an exponential density of states under the framework of admittance spectroscopy

被引:2
作者
Ge, Zhendong [1 ]
Wang, Lei [1 ]
Gu, Dawei [1 ]
Zhang, Tianyou [1 ]
机构
[1] Nanjing Tech Univ, Dept Phys, Nanjing 211816, Peoples R China
基金
中国国家自然科学基金;
关键词
Amorphous organic semiconductor; Carrier mobility; Admittance spectroscopy; Exponential density of states; CHARGE-TRANSPORT; HOLE MOBILITIES; FIELD; ELECTRON;
D O I
10.1016/j.orgel.2024.106996
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The carrier transport in amorphous organic semiconductors with an exponential density of states is systematically studied under the framework of admittance spectroscopy. Due to the exponential distribution, the slope of the double logarithmic curve of current density versus voltage is expressed as b+2, where b relates to the width of the density of states. And the mobility is proportional to nb, where n is the density of carrier. In this case, the peak frequencies of the negative differential susceptance and imaginary part of impedance turn out to be functions of parameter b. Therefore, the relation between transit time and mobility will be a linear function of parameter b. Applying our model to interpret experimental data of both small molecular and polymeric materials are illustrated. The contributions of electric field and of carrier density to mobility are discussed.
引用
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页数:7
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