Gradient of spin accumulation in spintronic devices such as lateral spin-valves allows to generate pure spin-current without charge-current. Spin accumulation is an out-of-equilibrium magnetization in which thermal fluctuations can occur. These fluctuations may constitute a source of noise in lateral spin-valve structures. In this study, the thermally induced fluctuations of the vector of spin-accumulation were investigated theoretically in diffusive regime. It is shown that paramagnetic resonance may arise in the spin-current carrying channel due to electron-electron interactions and exchange splitting induced by the spin-accumulation. This leads to an effect that was not previously considered: resonant increase of the magnetic susceptibility of the paramagnetic channel material and an associated decrease in signal-to-noise ratio around the resonance frequency. Frequency dependence of the magnetic susceptibility and signal-to-noise ratio were calculated analytically in the case of a specific T-shaped lateral spin-valve structures. It was shown however that this noise caused by thermally induced fluctuations in spin-accumulation is generally negligible in comparison to other sources of noise present in lateral spin-valves such as Johnson noise or thermal fluctuations of magnetization in the magnetic electrodes.
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Liu, Tianhan
Wang, Xiaolei
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Wang, Xiaolei
Wang, Hailong
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Wang, Hailong
Shi, Gang
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Shi, Gang
Gao, Fan
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Gao, Fan
Feng, Honglei
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Feng, Honglei
Deng, Haoyun
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Deng, Haoyun
Hu, Longqian
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Hu, Longqian
Lochner, Eric
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Lochner, Eric
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Schlottmann, Pedro
von Molnar, Stephan
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
von Molnar, Stephan
Li, Yongqing
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Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Li, Yongqing
Zhao, Jianhua
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R ChinaFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
Zhao, Jianhua
Xiong, Peng
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Florida State Univ, Dept Phys, Tallahassee, FL 32306 USAFlorida State Univ, Dept Phys, Tallahassee, FL 32306 USA
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Shanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R ChinaShanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R China
Lu, Wentian
Yao, Chunwei
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Shanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R ChinaShanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R China
Yao, Chunwei
Yan, Zhi
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Shanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R ChinaShanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R China
Yan, Zhi
Yuan, Zhe
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Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Interdisciplinary Ctr Theoret Phys & Informat Sci, Shanghai 200433, Peoples R ChinaShanxi Normal Univ, Res Inst Mat Sci, Sch Chem & Mat Sci, Key Lab Magnet Mol & Magnet Informat Mat,Minist Ed, Taiyuan 030031, Peoples R China