Photo-thermoelectric effect-driven detection of optical communication light in graphene/hBN heterostructures

被引：0

作者：

Iwasaki, Takuya ^{[1
]}

Sato, Yodai ^{[2
]}

Ogo, Makoto ^{[2
]}

Oh, Byunghun ^{[2
]}

Kozawa, Daichi ^{[1
]}

Kitaura, Ryo ^{[1
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[1
]}

Moriyama, Satoshi ^{[2
]}

Fujikata, Junichi ^{[4
]}

机构：

[1] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Tokyo Denki Univ, Dept Elect & Elect Engn, Adachi, Tokyo 1208551, Japan

[3] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Tsukuba, Ibaraki 3050044, Japan

[4] Tokushima Univ, Inst Post LED Photon, 2-1,Minami Josanjima, Tokushima 7708506, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 03期

关键词：

graphene/hBN heterostructure; photodetection; photo-thermoelectric effect; optical communication light; PHOTODETECTOR; GENERATION;

D O I：

10.35848/1347-4065/ad2bd6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the photodetection properties of high-quality graphene encapsulated by hexagonal boron nitride under illumination with optical communication light. We demonstrate a gate-tunable photocurrent and zero-bias switching cycle operation at RT. Through gate and temperature-dependent photocurrent measurements, we determine that the dominant photoresponse mechanism is the photo-thermoelectric effect. At low temperatures, the photocurrent in finite doping regions correlates with the Seebeck coefficient, while sharp peaks emerge near the charge neutrality point due to an edge-excited photocurrent. Our study provides guidelines for high-performance graphene-based optoelectronic devices.

引用

页数：5