Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes

被引：3
作者：
Usman, Muhammad [1 ]
Jamil, Tariq [1 ]
Aamir, Muhammad [2 ]
Alyemeni, Abdullrahman Abdullah [3 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Khyber Pakhtunkhwa, Pakistan
[2] King Faisal Univ, Dept Basic Sci, Al Hasa, Saudi Arabia
[3] King Faisal Univ, Coll Engn, Dept Elect Engn, Al Hasa, Saudi Arabia
来源：
OPTICAL ENGINEERING | 2023年 / 62卷 / 01期
关键词：
AlInN electron blocking layer; p-doping; ultraviolet light-emitting diodes; efficiency; BAND PARAMETERS; ALN; SEMICONDUCTORS; ALGAN;
D O I：
10.1117/1.OE.62.1.017106
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
III-nitride ultraviolet light-emitting diodes (UV LEDs) face low carrier confinement and poor p-doping. In this study, we propose a thin AlInN electron-blocking layer (EBL) in UV LEDs instead of conventional AlGaN EBL. Numerical results demonstrate that UV LED with thin AlInN enhances the optoelectronic performance. The results also reveal that AlGaN EBL is more sensitive to p-doping as compared to AlInN EBL. Thin AlInN layer facilitates hole transportation through intra-band tunneling. Moreover, AlInN has a high conduction band offset that suppresses the electron leakage effectively. Hence, the carrier radiative recombination rate considerably enhances with thin AlInN EBL. The efficiency droop in the proposed LED is also alleviated. (c) 2023 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数：9
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