Enhancing thermal and dielectric properties of MgO-Al2O3-SiO2-B2O3 glass-ceramics through CuO doping

被引:11
作者
Shang, Yijing [1 ,2 ]
Wang, Mingxia [1 ,2 ]
Li, Enzhu [1 ,2 ]
Zhong, Chaowei [1 ,2 ]
Qin, Tianying [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Mat, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China
关键词
Thermal conductivity; Coefficient of thermal expansion; Dielectric properties; EXPANSION COEFFICIENT; ELECTRICAL-PROPERTIES; CRYSTALLIZATION; MICROSTRUCTURE; FEATURES; IONS;
D O I
10.1016/j.ceramint.2023.07.175
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, (20-x)MgO-20Al2O3-56SiO2-4B2O3-xCuO (x = 0, 0.25, 0.5, 0.75, 1, 1.25 mol%) glass-ceramics were synthesized by solid-state reaction method. The crystallization, microstructure, thermal and dielectric properties of (20-x)MgO-20Al2O3-56SiO2-4B2O3-xCuO glass-ceramics was discussed in detail. It was demonstrated that the CuO lowers the crystallization temperature of alpha-cordierite and promotes the crystallization process of MgO-Al2O3-SiO-B2O3 glass-ceramics. Thus, the crystallization showed a substantial influence on the dielectric properties, as evidenced by an elevation in dielectric constant and a decrease in dielectric loss. Specifically, with the addition of 0.5 mol% CuO, the MgO-Al2O3-SiO-B2O3 glass-ceramics sintered at 1050 degrees C shows excellent properties of: er = 5.04, tand = 2.2 x 10-4, kappa = 3.4 W/mK and alpha = 1.75 x 10-6/degrees C. These works provide valuable insights into the design and development of (20-x)MgO-20Al2O3-56SiO2-4B2O3-xCuO glass-ceramics with tailored properties for structure/function integration in the electronics industry.
引用
收藏
页码:32078 / 32085
页数:8
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