Multifunctional WSe2/MoSe2/WSe2/MoSe2 heterostructures

被引：6

作者：

Abderrahmane, Abdelkader ^{[1
,2
]}

Woo, Changlim ^{[1
]}

Jung, Pan-Gum ^{[1
]}

Ko, Pil Ju ^{[1
]}

机构：

[1] Chosun Univ, Dept Elect Engn, 375 Seosuk Dong, Gwangju 501759, South Korea

[2] Univ Abdelhamid Ibn Badis Mostaganem, Fac Sci & Technol, Elect Engn Dept, BP 188, Mostaganem 27000, Algeria

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 169卷

基金：

新加坡国家研究基金会;

关键词：

Transition metal dichalcogenides (TMDCs); Molybdenum diselenide (MoSe 2 ); Tungsten diselenide (WSe 2 ); Tunneling effect; Photodetection; OPTOELECTRONIC PROPERTIES; GROWTH; MOSE2;

D O I：

10.1016/j.mssp.2023.107864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of two-dimensional (2D) materials-based multifunctional electronic devices and sensors has been boosted in recent years. In this paper, we reported the fabrication of multifunctional heterostructures based on 2D molybdenum diselenide (MoSe2) and 2D tungsten diselenide (WSe2) on oxidized and highly-doped silicon substrate. We carried out morphological characterizations using scanning electron microscopy (SEM) and atomic force microscopy (AFM), as well Raman spectroscopy. Thereafter, we studied the electrical characteristics of PN junctions, NPN and PNP junctions, and PNPN heterojunctions, where results demonstrated that WSe2/MoSe2 junctions had diode-like and Schottky-diode-like behaviors, MoSe2/WSe2/MoSe2 and WSe2/MoSe2/WSe2 had bipolar-junction-transistor-like (BJT) behaviors, and WSe2/MoSe2/WSe2/MoSe2 heterojunction showed tunneling effect. The optoelectronic properties of MoSe2/WSe2/MoSe2 and WSe2/MoSe2/WSe2 was carried out and the phototransistors exhibits strong and tunable photodetection properties, with a high photoresponsivity of 6 and 3 AW-1, respectively.

引用

页数：8

共 39 条

[1] Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor [J].