Universal model for electron thermal-field emission from two-dimensional semimetals

被引:18
作者
Ang, L. K. [1 ]
Ang, Yee Sin [1 ]
Lee, Ching Hua [2 ]
机构
[1] Singapore Univ Technol & Design, Sci Math & Technol, Singapore 487372, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
关键词
GRAPHENE; TRANSISTOR; TRANSPORT; SCHOTTKY; CONTACTS;
D O I
10.1063/5.0137400
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We present the theory of out-of-plane (or vertical) electron thermal-field emission from two-dimensional (2D) semimetals. We show that the current-voltage-temperature characteristic is well captured by a universal scaling relation applicable for broad classes of 2D semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at the verge of topological phase transition, and nodal line semimetal. Here, an important consequence of the universal emission behavior is revealed: In contrast to the common expectation that band topology shall manifest differently in the physical observables, band topologies in two spatial dimension are indistinguishable from each other and bear no special signature in electron emission characteristics. Our findings represent the quantum extension of the universal semiclassical thermionic emission scaling law in 2D materials and provide theoretical foundations for the understanding of electron emission from cathode and charge interface transport for the design of 2D-material-based vacuum nanoelectronics.
引用
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页数:8
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