Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

被引：10
|
作者：
Xu, Ji [1 ]
Lin, Congyuan [1 ]
Li, Yu [1 ]
Zhao, Xueliang [1 ]
Shi, Yongjiao [2 ]
Zhang, Xiaobing [2 ]
机构：
[1] Nanjing Univ Informat Sci & Technol, Sch Elect & Informat Engn, Nanjing 210044, Peoples R China
[2] Southeast Univ, Sch Elect Sci & Engn, Joint Int Res Lab Informat Display & Visualizat, Nanjing 210096, Peoples R China
来源：
MICROMACHINES | 2023年 / 14卷 / 02期
基金：
中国国家自然科学基金;
关键词：
nanoscale vacuum channel; field emission; fabrication; FIELD-EMISSION TRIODE;
D O I：
10.3390/mi14020488
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.
引用
收藏
页数：11
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