A comparative study of superconductivity at LaAlO3/SrTiO3 and BaTiO3/LaAlO3/SrTiO3 heterointerfaces

被引：1

作者：

Yan, Qiaohong ^{[1
]}

Gao, Haobin ^{[1
,2
]}

Peng, Wei ^{[2
,3
]}

Zhu, Xiaohong ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Lab Superconducting Elect, Shanghai 200050, Peoples R China

[3] CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China

来源：

AIP ADVANCES | 2023年 / 13卷 / 06期

关键词：

2-DIMENSIONAL ELECTRON GASES; INTERFACE; CONDUCTIVITY;

D O I：

10.1063/5.0159304

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lead-free BaTiO3 (BTO) film was fabricated by pulsed laser deposition on LaAlO3/SrTiO3 (LAO/STO) heterostructure in oxygen pressure of 2 x 10(-3) Pa, which is experimentally required for ensuring the two-dimensional electron gas at LAO/STO heterointerface. Modulation of back-gate voltage on the superconductivity of LAO/STO and BTO/LAO/STO heterointerfaces was studied. The results indicate that the back-gate voltage can adjust the resistance at high temperatures around 300 mK, while it does not modulate the superconducting transition temperature of LAO/STO, which occurs at 160 mK. As for BTO/LAO/STO, it still shows a superconducting transition-like behavior at 110 mK. However, when a negative back-gate voltage is applied, the superconducting transition-like behavior disappears, and after removing the voltage, unlike what was observed for LAO/STO, the superconductivity cannot be recovered. Given this, some underlying mechanisms are proposed.

引用

页数：6

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