Design of n-CdS/p-CuInTe2/p +-MoS2 thin film solar cell with a power conversion efficiency of 34.32%

被引：31

作者：

Pappu, Md Alamin Hossain ^{[1
]}

Kuddus, Abdul ^{[2
]}

Mondal, Bipanko Kumar ^{[3
]}

Abir, Ahnaf Tahmid ^{[1
]}

Hossain, Jaker ^{[1
]}

机构：

[1] Univ Rajshahi, Dept Elect & Elect Engn, Solar Energy Lab, Rajshahi 6205, Bangladesh

[2] Ritsumeikan Univ BKC, Ritsumeikan Global Innovat Res Org R GIRO, Shiga 5250058, Japan

[3] Pundra Univ Sci & Technol, Dept Elect & Elect Engn, Bogura 5800, Bangladesh

来源：

OPTICS CONTINUUM | 2023年 / 2卷 / 04期

关键词：

OPTICAL-PROPERTIES; HEAT-TREATMENT; CUINTE2; LAYERS;

D O I：

10.1364/OPTCON.486044

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Copper indium telluride (CuInTe2)-based n-CdS/p-CuInTe2/p +-MoS2 double-heterostructure solar cell has been investigated numerically by solar cell capacitance simulator (SCAPS-1D). Initially, an adjusted condition among the most influencing parameters e.g. thickness, carrier doping level, and bulk defects of active materials such as CdS window, CuInTe2 absorber, and p +-MoS2 back surface field (BSF) layers has been obtained by a systematic computation. The proposed solar cell exhibits an improved power conversion efficiency (PCE) of 34.32% with VOC =0.927 V, JSC = 42.50 mA/cm2, and FF = 87.14% under the optimized condition. The PCE can be further enhanced to 38.87% introducing sub-bandgap absorption in the MoS2 (300 nm) BSF with Urbach energy, E0 of 0.4 eV. These detailed simulation results reveal a huge potential of CuInTe2 absorber with MoS2 BSF layer for the manufacture of a cost-effective, high-efficiency double-heterojunction thin film solar cell.

引用

页码：942 / 955

页数：14

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