Van Der Waals Metal Contacts for Electronic and Optoelectronic Devices

被引:2
作者
Lee, Joo-Hong [1 ,2 ]
Choi, Seung-Gu [1 ,2 ]
Lee, Jin-Wook [1 ,2 ,3 ]
机构
[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Dept Nanoengn, Suwon 16419, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Dept Nanoengn, Suwon 16419, South Korea
[3] Sungkyunkwan Univ, SKKU Inst Energy Sci & Technol SIEST, Suwon 16419, South Korea
基金
新加坡国家研究基金会;
关键词
van der Waals interaction; metal contact; physical vapor deposition; thin film electronics; Fermi-level pinning; HEAT-CAPACITY; INTRINSIC DEFECTS; SOLAR-CELLS; LEAD; 1ST-PRINCIPLES; CONDUCTIVITY; TRANSISTORS; MOLYBDENUM; GRAPHENE;
D O I
10.1021/acsaelm.2c01789
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the fabrication of thin-film electronics, conventional physical vapor deposition (PVD) processes have been widely used to form metal contacts on various thin films. However, the PVD process, involving thermally activated high-energy metal atoms, damages the underlying thin films, severely deteriorating the performance and stability of the device. The van der Waals (vdW) metal-contact approach has recently emerged to avoid this issue. By transferring predeposited metal contacts using vdW interactions, atomically sharp and electronically clean heterointerfaces can be formed without generating unintended defects. In this article, we review the fundamentals, processes, and various applications of the vdW metal-integration approach. The classical theory of vdW interactions is first reviewed, followed by the introduction of various approaches for constructing vdW metal contacts on thin films. Subsequently, the influence of contact configuration on the performance of various applications is summarized. Finally, the remaining challenges and prospects are discussed for the practical usage and versatile application of vdW metal contacts for next-generation electronic devices.
引用
收藏
页码:1903 / 1925
页数:23
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