NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

被引：7
|
作者：
Wan, Hsiao-Hsuan [1 ]
Li, Jian-Sian [1 ]
Chiang, Chao-Ching [1 ]
Xia, Xinyi [1 ]
Ren, Fan [1 ]
Masten, Hannah N. [2 ]
Lundh, James Spencer [2 ]
Spencer, Joseph A. [2 ,3 ]
Alema, Fikadu [4 ]
Osinsky, Andrei [4 ]
Jacobs, Alan G. [2 ]
Hobart, Karl [2 ]
Tadjer, Marko J. [2 ]
Pearton, S. J. [5 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] US Naval Res Lab, Washington, DC 20375 USA
[3] Virginia Tech, Blacksburg, VA 24060 USA
[4] Agnitron Technol Inc, Chanhassen, MN 55317 USA
[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 03期
关键词：
SCHOTTKY-BARRIER DIODE; POWER FIGURE; LEAKAGE CURRENT; GA2O3; MOSFETS; MERIT;
D O I：
10.1116/6.0002393
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
NiO/beta-(AlxGa1-x)(2)O-3/Ga2O3 heterojunction lateral geometry rectifiers with diameter 50-100 mu m exhibited maximum reverse breakdown voltages > 7 kV, showing the advantage of increasing the bandgap using the beta-(AlxGa1-x)(2)O-3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of & SIM;21%. On-state resistances were in the range of 50-2180 omega cm(2), leading to power figures-of-merit up to 0.72 MW cm(-2). The forward turn-on voltage was in the range of 2.3-2.5 V, with maximum on/off ratios > 700 when switching from 5 V forward to reverse biases up to -100 V. Transmission line measurements showed the specific contact resistance was 0.12 omega cm(2). The breakdown voltage is among the highest reported for any lateral geometry Ga2O3-based rectifier.
引用
收藏
页数：6
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