NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

被引：7

作者：

Wan, Hsiao-Hsuan ^{[1
]}

Li, Jian-Sian ^{[1
]}

Chiang, Chao-Ching ^{[1
]}

Xia, Xinyi ^{[1
]}

Ren, Fan ^{[1
]}

Masten, Hannah N. ^{[2
]}

Lundh, James Spencer ^{[2
]}

Spencer, Joseph A. ^{[2
,3
]}

Alema, Fikadu ^{[4
]}

Osinsky, Andrei ^{[4
]}

Jacobs, Alan G. ^{[2
]}

Hobart, Karl ^{[2
]}

Tadjer, Marko J. ^{[2
]}

Pearton, S. J. ^{[5
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] US Naval Res Lab, Washington, DC 20375 USA

[3] Virginia Tech, Blacksburg, VA 24060 USA

[4] Agnitron Technol Inc, Chanhassen, MN 55317 USA

[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 03期

关键词：

SCHOTTKY-BARRIER DIODE; POWER FIGURE; LEAKAGE CURRENT; GA2O3; MOSFETS; MERIT;

D O I：

10.1116/6.0002393

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

NiO/beta-(AlxGa1-x)(2)O-3/Ga2O3 heterojunction lateral geometry rectifiers with diameter 50-100 mu m exhibited maximum reverse breakdown voltages > 7 kV, showing the advantage of increasing the bandgap using the beta-(AlxGa1-x)(2)O-3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of & SIM;21%. On-state resistances were in the range of 50-2180 omega cm(2), leading to power figures-of-merit up to 0.72 MW cm(-2). The forward turn-on voltage was in the range of 2.3-2.5 V, with maximum on/off ratios > 700 when switching from 5 V forward to reverse biases up to -100 V. Transmission line measurements showed the specific contact resistance was 0.12 omega cm(2). The breakdown voltage is among the highest reported for any lateral geometry Ga2O3-based rectifier.

引用

页数：6

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NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV

NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV