NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

被引：7

作者：

Wan, Hsiao-Hsuan ^{[1
]}

Li, Jian-Sian ^{[1
]}

Chiang, Chao-Ching ^{[1
]}

Xia, Xinyi ^{[1
]}

Ren, Fan ^{[1
]}

Masten, Hannah N. ^{[2
]}

Lundh, James Spencer ^{[2
]}

Spencer, Joseph A. ^{[2
,3
]}

Alema, Fikadu ^{[4
]}

Osinsky, Andrei ^{[4
]}

Jacobs, Alan G. ^{[2
]}

Hobart, Karl ^{[2
]}

Tadjer, Marko J. ^{[2
]}

Pearton, S. J. ^{[5
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] US Naval Res Lab, Washington, DC 20375 USA

[3] Virginia Tech, Blacksburg, VA 24060 USA

[4] Agnitron Technol Inc, Chanhassen, MN 55317 USA

[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2023年 / 41卷 / 03期

关键词：

SCHOTTKY-BARRIER DIODE; POWER FIGURE; LEAKAGE CURRENT; GA2O3; MOSFETS; MERIT;

D O I：

10.1116/6.0002393

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

NiO/beta-(AlxGa1-x)(2)O-3/Ga2O3 heterojunction lateral geometry rectifiers with diameter 50-100 mu m exhibited maximum reverse breakdown voltages > 7 kV, showing the advantage of increasing the bandgap using the beta-(AlxGa1-x)(2)O-3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of & SIM;21%. On-state resistances were in the range of 50-2180 omega cm(2), leading to power figures-of-merit up to 0.72 MW cm(-2). The forward turn-on voltage was in the range of 2.3-2.5 V, with maximum on/off ratios > 700 when switching from 5 V forward to reverse biases up to -100 V. Transmission line measurements showed the specific contact resistance was 0.12 omega cm(2). The breakdown voltage is among the highest reported for any lateral geometry Ga2O3-based rectifier.

引用

页数：6

共 50 条

[1] Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV
Li, Jian-Sian
Wan, Hsiao-Hsuan
Chiang, Chao-Ching
Xia, Xinyi
Yoo, Timothy Jinsoo
Kim, Honggyu
Ren, Fan
Pearton, Stephen J.
CRYSTALS, 2023, 13 (06)
[2] Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Heterojunction Rectifiers
Li, Jian-Sian
Wan, Hsiao-Hsuan
Chiang, Chao-Ching
Yoo, Timothy Jinsoo
Yu, Meng-Hsun
Ren, Fan
Kim, Honggyu
Liao, Yu-Te
Pearton, Stephen J.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2024, 13 (03)
[3] Design of microwave β-(AlxGa1-x)2O3/Ga2O3 lateral Schottky barrier diodes
Shaikshavali, Dudekula
Kannadassan, D.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (06)
[4] Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructures Growth for Power Electronics
Miller, Ross
Alema, Fikadu
Osinsky, Andrei
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 31 (04) : 467 - 474
[5] Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
Masten, Hannah N.
Lundh, James Spencer
Feygelson, Tatyana I.
Sasaki, Kohei
Cheng, Zhe
Spencer, Joseph A.
Liao, Pai-Ying
Hite, Jennifer K.
Pennachio, Daniel J.
Jacobs, Alan G.
Mastro, Michael A.
Feigelson, Boris N.
Kuramata, Akito
Ye, Peide
Graham, Samuel
Pate, Bradford B.
Hobart, Karl D.
Anderson, Travis J.
Tadjer, Marko J.
APPLIED PHYSICS LETTERS, 2024, 124 (15)
[6] Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Li, Jian-Sian
Chiang, Chao-Ching
Xia, Xinyi
Yoo, Timothy Jinsoo
Ren, Fan
Kim, Honggyu
Pearton, S. J.
APPLIED PHYSICS LETTERS, 2022, 121 (04)
[7] Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface
Oshima, Takayoshi
Kato, Yuji
Kawano, Naoto
Kuramata, Akito
Yamakoshi, Shigenobu
Fujita, Shizuo
Oishi, Toshiyuki
Kasu, Makoto
APPLIED PHYSICS EXPRESS, 2017, 10 (03)
[8] Highly conductive epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3 films by MOCVD
Alema, Fikadu
Itoh, Takeki
Vog, Samuel
Speck, James S.
Osinsky, Andrei
JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (10)
[9] MOCVD growth of β-phase (AlxGa1-x)2O3 on (201) β-Ga2O3 substrates
Bhuiyan, A. F. M. Anhar Uddin
Feng, Zixuan
Johnson, Jared M.
Huang, Hsien-Lien
Hwang, Jinwoo
Zhao, Hongping
APPLIED PHYSICS LETTERS, 2020, 117 (14)
[10] Band Gap and Band Offset of Ga2O3 and (AlxGa1-x)2O3 Alloys
Wang, Tianshi
Li, Wei
Ni, Chaoying
Janotti, Anderson
PHYSICAL REVIEW APPLIED, 2018, 10 (01):

← 1 2 3 4 5 →

NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV

NiO/β-(AlxGa1-x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV