Oxidation behavior of the directed energy deposited 316L stainless steel in supercritical carbon dioxide environment: Effect of post-manufacturing heat treatment

被引:5
作者
Chen, Junjie [1 ,2 ]
Lee, Hyeon Bae [1 ]
Jeong, Chaewon [1 ]
Xiao, Qian [1 ,3 ]
Jang, Kyungnam [4 ]
An, Taejeong [1 ]
Jang, Changheui [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Nucl & Quantum Engn, Daejeon 34141, South Korea
[2] Shanghai Univ, Inst Mat, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China
[4] Korea Hydro & Nucl Power Co, Cent Res Inst, Daejeon 34101, South Korea
关键词
Directed-energy deposit; Stainless steel; Heat treatment; Oxidation; Valence electron; BULK NANOCRYSTALLINE 304-STAINLESS-STEEL; STRESS-CORROSION CRACKING; ELECTROCHEMICAL CORROSION; OXIDE-FILM; ALLOYS; WATER; RESISTANCES; DIFFUSION; GROWTH; WORK;
D O I
10.1016/j.addma.2024.103998
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The oxidation behaviors of directed energy deposit (DED) 316L SS with various post-DED heat treatments (HTs) as well as commercial 316L SS were investigated in a 650 degree celsius/20 MPa sCO(2) environment. In addition to the detailed microstructure analyses, ultraviolet photoelectron spectroscopy (UPS) analysis was performed to measure the valence electron configuration, and the results were considered in understanding the observed oxidation behavior. Compared to commercial 316L SS, the unique large columnar grains and decrease in valence electron density of DED 316L SS benefit the oxidation resistance by retarding cation and anion migrations, even though they have similar oxide layer consisting of a Fe-rich outer oxide layer and a Cr- and Fe-rich internal oxidation zone. After stress-relieving HT at 850 degree celsius, the oxidation resistance is further enhanced owing to the HT-induced dislocation density decrease, resulting in a thinner sandwich-like oxide layer with chromia-type outer and inner sublayers and a silicon oxide middle sublayer. Additional improvement in the oxidation resistance is observed after homogenization HT at 1150 degrees C, with a thinner oxide layer and less inward intergranular oxidation, which could be attributed to an additional decrease in valence electron density.
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页数:19
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