Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells

被引:0
作者
Ouyang, Ping [1 ,2 ]
Liu, Kunzi [2 ]
Zhang, Jiaxin [2 ]
Chen, Qiushuang [2 ]
Deng, Liqiong [1 ,2 ]
Yan, Long [3 ]
Hoo, Jason [3 ]
Guo, Shiping [3 ]
Chen, Li [2 ]
Guo, Wei [2 ]
Ye, Jichun [2 ]
机构
[1] Ningbo Univ, Fac Mat Sci & Chem Engn, Ningbo 315211, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Engn Res Ctr Energy Optoelect Mat & Devic, Ningbo 315201, Peoples R China
[3] Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China
基金
中国国家自然科学基金;
关键词
AlGaN MQWs; ultraviolet emitters; carrier localization; INGAN; PHOTOLUMINESCENCE; EMISSION; DYNAMICS; QUALITY; GROWTH; SHIFT; ALN;
D O I
10.3390/cryst13071076
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Semipolar AlGaN multiple quantum wells (MQWs) have unique advantages in deep ultraviolet light emitters due to the weak Quantum-Confined Stark Effect. However, their applications are hampered by the poor crystalline quality of semipolar AlGaN thin films. Different treatments were developed to improve the crystal quality of semipolar AlGaN, including a multistep in situ thermal annealing technique proposed by our group. In this work, temperature-dependent and time-resolved photoluminescence characterizations were performed to reveal the carrier localization in the MQW region. The degree of carrier localization in semipolar AlGaN MQWs grown on top of the in situ-annealed AlN is similar to that of conventional ex situ face-to-face annealing, both of which are significantly stronger than that of the c-plane counterpart. Moreover, MQWs on in situ-annealed AlN show drastically reduced dislocation densities, demonstrating its great potential for the future development of high-efficiency optoelectronic devices.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Temperature-dependent photoluminescence measurements on a sub-micrometer length scale on green light emitting InGaN/GaN quantum wells
    Danhof, J.
    Vierheilig, C.
    Schwarz, U. T.
    Meyer, T.
    Peter, M.
    Hahn, B.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (05): : 1270 - 1274
  • [22] Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain-Balanced Nonpolar InGaN/AlGaN Quantum Wells
    Cao, Yang
    Dzuba, Brandon
    Magill, Brenden A.
    Senichev, Alexander
    Trang Nguyen
    Diaz, Rosa E.
    Manfra, Michael J.
    McGill, Stephen
    Garcia, Carlos
    Khodaparast, Giti A.
    Malis, Oana
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2022, 259 (06):
  • [23] Polar (In,Ga)N/GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the "Green Gap" Problem
    Tanner, Daniel S. P.
    Dawson, Philip
    Kappers, Menno J.
    Oliver, Rachel A.
    Schulz, Stefan
    [J]. PHYSICAL REVIEW APPLIED, 2020, 13 (04)
  • [24] Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence
    Wu, Feng
    Zhang, Jun
    Wang, Shuai
    Long, Hanling
    Dai, Jiangnan
    Feng, Zhe Chuan
    Gong, Zheng
    Chen, Changqing
    [J]. Optical Materials Express, 2015, 5 (11): : 2608 - 2615
  • [25] Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
    Li, X.
    Zhao, D. G.
    Yang, J.
    Jiang, D. S.
    Liu, Z. S.
    Chen, P.
    Zhu, J. J.
    Liu, W.
    He, X. G.
    Li, X. J.
    Liang, F.
    Zhang, L. Q.
    Liu, J. P.
    Yang, H.
    Zhang, Y. T.
    Du, G. T.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2016, 97 : 186 - 192
  • [26] High quality semipolar (1(1)over-bar02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
    Ichikawa, S.
    Iwata, Y.
    Funato, M.
    Nagata, S.
    Kawakami, Y.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (25)
  • [27] Evidence of Carrier Localization in AlGaN/GaN-Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging
    Cui, Mei
    Guo, Wei
    Xu, Houqiang
    Jiang, Jie'an
    Chen, Li
    Mitra, Somak
    Roqan, Iman S.
    Jiang, Haibo
    Li, Xiaohang
    Ye, Jichun
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (06):
  • [28] Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps
    Kojima, K.
    Nagasawa, Y.
    Hirano, A.
    Ippommatsu, M.
    Honda, Y.
    Amano, H.
    Akasaki, I.
    Chichibu, S. F.
    [J]. APPLIED PHYSICS LETTERS, 2019, 114 (01)
  • [29] Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells
    Lu, Haiyan
    Lu, Yuanjie
    Wang, Qiang
    Li, Jianfei
    Feng, Zhihong
    Xu, Xiangang
    Ji, Ziwu
    [J]. CHINESE OPTICS LETTERS, 2016, 14 (04)
  • [30] Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells
    Toprasertpong, Kasidit
    Fujii, Hiromasa
    Wang, Yunpeng
    Watanabe, Kentaroh
    Sugiyama, Masakazu
    Nakano, Yoshiaki
    [J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (02): : 607 - 613