Spontaneous Symmetry-Breaking of Nonequilibrium Steady-States Caused by Nonlinear Electrical Transport

被引:1
|
作者
Bradicich, Adelaide [1 ]
Brown, Timothy D. [2 ]
Ganguli, Sabyasachi [3 ]
Williams, R. Stanley [4 ]
Shamberger, Patrick J. [1 ]
机构
[1] Texas A&M Univ, Dept Mat Sci & Engn, 575 Ross St, College Stn, TX 77840 USA
[2] Sandia Natl Labs, 7011 East Ave, Livermore, CA 94550 USA
[3] Air Force Res Lab, 1864 4th St, Wright Patterson AFB, OH 45433 USA
[4] Texas A&M Univ, Dept Elect & Comp Engn, 188 Bizzell St, College Stn, TX 77843 USA
关键词
electro-thermal localization; instability; Local Activity; negative differential resistance; nonequilibrium thermodynamics; symmetry-breaking; NEGATIVE DIFFERENTIAL RESISTANCE; TEMPERATURE; FIELD;
D O I
10.1002/aelm.202300265
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Negative differential resistance (NDR) in certain materials has been attributed to spontaneous emergence of symmetry-breaking electrical current density localization from a previously homogeneous distribution, which is postulated to occur due to the nonequilibrium thermodynamic force of minimization of entropy production. However, this phenomenon has not been quantitatively predicted based on intrinsic material properties and an applied electrical stimulus. Herein an instability criterion is derived for localization of current density and temperature from a thermal fluctuation in a parallel conductor model of a thin film that is subject to Newton's law of cooling. The conditions for steady-state electro-thermal localization is predicted, verifying a decrease in entropy production upon localization. Electro-thermal localization accompanied by a decrease of entropy production is confirmed in a multiphysics simulation of current flow in a thin film. The instability criterion predicts conditions for spontaneous current density localization, relating symmetry breaking fundamentally to dynamical instability via Local Activity theory.
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页数:7
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