Gate Driver Circuit with All-Magnetic Isolation for Cascode-Connected SiC JFETs in a Three-Level T-Type Bridge-Leg

被引：0

作者：

McNeill, Neville ^{[1
]}

Vozikis, Dimitrios ^{[2
]}

Pena-Alzola, Rafael ^{[1
]}

Wang, Shuren ^{[1
]}

Pollock, Richard ^{[3
]}

Holliday, Derrick ^{[4
]}

Williams, Barry W. ^{[1
]}

机构：

[1] Univ Strathclyde, Dept Elect & Elect Engn, Glasgow G1 1XW, Scotland

[2] WSP, Glasgow G1 3BX, Scotland

[3] Technelec Ltd, Oakham LE15 6QW, England

[4] Newcastle Univ, Dept Elect & Elect Engn, Newcastle NE1 7RU, England

来源：

ENERGIES | 2023年 / 16卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

cascode-connected; gate driver; isolation; JFET; silicon carbide; T-type converter; CONVERTER;

D O I：

10.3390/en16031226

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. Gate driver circuitry for SiC devices has to be tolerant of rapid common-mode voltage changes. With respect to the resultant potentially problematic common-mode current paths, an arrangement of transformers is proposed for supplying the power devices with drive signals and power for their local floating gate driver circuits. The high-frequency carrier phase-switching technique is used to reduce the number of transformers. Signal timing and other implementation issues are addressed when using this arrangement with the T-type converter. The circuit is demonstrated in a 540 V bridge-leg constructed around 650 V and 1200 V cascode-connected normally-on SiC junction field effect transistors (JFETs).

引用

页数：16