Scanning tunneling microscopy study of hidden phases in atomically thin 1T-TaS2

被引:0
作者
Yang, Wooin [1 ]
Kim, Dowook [1 ]
Kim, Hyoung Kug [1 ]
Kim, Tae-Hwan [1 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
Scanning tunneling microscopy; 1T-Ta S-2; Charge density wave; Exfoliation; Electric excitation; Hidden phase; DENSITY-WAVE STRUCTURE; CHARGE; SUPERCONDUCTIVITY; TRANSITIONS; SURFACE; STATE;
D O I
10.1007/s40042-023-00705-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Lower thermal stability due to thinning often leads to unprecedented hidden phases in low-dimensional materials. Such hidden phases can coexist or compete with preexisting electronic phases. We investigate hidden phases observed in atomically thin (6-8 layers) 1T-TaS2 with scanning tunneling microscopy. First, we can electrically induce a hidden stripe phase at room temperature. Such a uniaxial stripe phase has three equivalent orientations by breaking threefold symmetry of 1T-TaS2. We also reveal that the hidden stripe phase coexists with nearly commensurate charge-density-wave phase. Next, we observe that the emergent stripe phase spontaneously appears without any electric excitation on a tiny flake ( 160 x 80 nm(2)). Our findings may provide a plausible explanation for the previously observed phase transition and twofold optical response in thin 1T-TaS2 devices at room temperature. Furthermore, the hidden stripe phase would be crucial to understand exotic CDW-related phenomena in 1T-TaS2 for potential applications.
引用
收藏
页码:298 / 304
页数:7
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