Source-to-drain Tunneling Analysis in p-type Si and Ge Based NWTs/NSTs

被引：0

作者：

Hung, Lee-Chi ^{[1
]}

Stanojevic, Zlatan ^{[1
]}

Tsai, Chen-Ming ^{[1
]}

Karner, Markus ^{[1
]}

Chen, Edward ^{[2
]}

机构：

[1] Global TCAD Solut GmbH, Bosendorferstr 1-12, A-1010 Vienna, Austria

[2] Taiwan Semicond Mfg Co Ltd, Corp Res, 168 Pk Ave II,Hsinchu Sci Pk, Hsinchu 30075, Taiwan

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

D O I：

10.23919/SISPAD57422.2023.10319588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examine the dependence of source-to-drain tunneling (SDT) leakage on the effective channel length (L-eff) for Si and Ge pMOS with L-eff ranging from 5nm to 20 nm. The subband Boltzmann transport equation is solved including the SDT process, which is evaluated from the WKB approximation. Device architectures including nanosheet transistors (NSTs) and nanowire transistors (NWTs) with the proper specification are analyzed. The results show that SDT becomes a serious concern for Ge pNSTs with L-eff lower than 17 nm. However, such leakage degradation from SDT, can be further mitigated by optimizing the cross-sectional configuration.

引用

页码：237 / 240

页数：4

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