Intraband carrier relaxation in mid-infrared (3-4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers

被引：3

作者：

Kudryavtsev, K. E. ^{[1
]}

Rumyantsev, V. V. ^{[1
]}

Utochkin, V. V. ^{[1
]}

Dubinov, A. A. ^{[1
]}

Aleshkin, V. Ya. ^{[1
]}

Zholudev, M. S. ^{[1
]}

Mikhailov, N. N. ^{[2
]}

Dvoretskii, S. A. ^{[2
]}

Remesnik, V. G. ^{[2
]}

Gavrilenko, V. I. ^{[1
]}

Morozov, S. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603087, Russia

[2] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, 13 Lavrentiev Ave, Novosibirsk 630090, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2023年 / 133卷 / 07期

基金：

俄罗斯科学基金会;

关键词：

STIMULATED-EMISSION; M WAVELENGTH; HOT PHONONS; RECOMBINATION; EDGE; THZ;

D O I：

10.1063/5.0130651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we study stimulated emission (SE) at 3-4 mu m wavelengths from optically pumped bulk HgCdTe and HgTe/CdHgTe quantum-well heterostructures. It is proposed that, under intense excitation of such structures, energy relaxation of hot electrons occurs mostly via electron-hole scattering, while the relaxation of hot holes is direct, phonon-mediated. By balancing carrier generation/recombination and heating/cooling processes, we outline heat-induced limits to the operating temperatures of mid-IR HgCdTe lasers. Based on the existing experimental results for the SE around 3.5 mu m, we predict that lasing at this wavelength may be achieved in 2.5 mu m-pumped optical converters at temperatures as high as T-max similar to 270 K.

引用

页数：8

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