Influence of post fabrication annealing on device performance of InAlN/ GaN high electron mobility transistors

被引：1
作者：
Luo, Xin [1 ]
Cui, Peng [1 ]
Linewih, Handoko [1 ]
Cheong, Kuan Yew [2 ]
Xu, Mingsheng [1 ]
Chen, Siheng [1 ]
Wang, Liu [1 ]
Sun, Jiuji [1 ]
Dai, Jiacheng [1 ]
Xu, Xiangang [1 ]
Han, Jisheng [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2024年 / 187卷
基金：
中国国家自然科学基金;
关键词：
InAlN/GaN HEMT; Post fabrication annealing; Schottky barrier; Electron mobility; Scattering; PIEZOELECTRIC POLARIZATION; ALGAN/GAN;
D O I：
10.1016/j.jpcs.2024.111870
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this study, effect of post-fabrication annealing (PFA) on the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) has been investigated. With PFA, the gate Schottky barrier height increases by 94 % (from 1.03 eV to 2.00 eV) and the interface trap state density (D-it) is reduced by 27 %. Compared with the device without PFA, a higher on-current (11 %), a larger on/off current ratio (similar to 1 order), a higher transconductance (3 %), a reduced gate leakage current (84 %) and a lower subthreshold swing (10 %) are recorded in device with PFA. In addition, the improved electron mobility is observed and the reduction of polarization Coulomb field (PCF) scattering is proven in device with PFA due to the enhancement of polarization electrical field in InAlN/GaN heterostructure.
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页数：7
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  • [1] Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
    Ajayan, J.
    Nirmal, D.
    Mohankumar, P.
    Mounika, B.
    Bhattacharya, Sandip
    Tayal, Shubham
    Fletcher, A. S. Augustine
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 151
  • [2] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
    Ambacher, O
    Smart, J
    Shealy, JR
    Weimann, NG
    Chu, K
    Murphy, M
    Schaff, WJ
    Eastman, LF
    Dimitrov, R
    Wittmer, L
    Stutzmann, M
    Rieger, W
    Hilsenbeck, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3222 - 3233
  • [3] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
    Ambacher, O
    Foutz, B
    Smart, J
    Shealy, JR
    Weimann, NG
    Chu, K
    Murphy, M
    Sierakowski, AJ
    Schaff, WJ
    Eastman, LF
    Dimitrov, R
    Mitchell, A
    Stutzmann, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 334 - 344
  • [4] A NEW AND SIMPLE-MODEL FOR GAAS HETEROJUNCTION FET GATE CHARACTERISTICS
    CHEN, CH
    BAIER, SM
    ARCH, DK
    SHUR, MS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 570 - 577
  • [5] Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors
    Cui, Peng
    Zhang, Jie
    Yang, Tzu-Yi
    Chen, Hang
    Zhao, Haochen
    Lin, Guangyang
    Wei, Lincheng
    Xiao, John Q.
    Chueh, Yu-Lun
    Zeng, Yuping
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (06)
  • [6] Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
    Cui, Peng
    Liu, Huan
    Lin, Wei
    Lin, Zhaojun
    Cheng, Aijie
    Yang, Ming
    Liu, Yan
    Fu, Chen
    Lv, Yuanjie
    Luan, Chongbiao
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 1038 - 1044
  • [7] Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing
    Huang, Shyh-Jer
    Chou, Cheng-Wei
    Su, Yan-Kuin
    Lin, Jyun-Hao
    Yu, Hsin-Chieh
    Chen, De-Long
    Ruan, Jian-Long
    [J]. APPLIED SURFACE SCIENCE, 2017, 401 : 373 - 377
  • [8] High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure
    Hult, Bjorn
    Thorsell, Mattias
    Chen, Jr-Tai
    Rorsman, Niklas
    [J]. IEEE ELECTRON DEVICE LETTERS, 2022, 43 (05) : 781 - 784
  • [9] Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
    Ibbetson, JP
    Fini, PT
    Ness, KD
    DenBaars, SP
    Speck, JS
    Mishra, UK
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 250 - 252
  • [10] Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
    Kim, Hyun-Seop
    Han, Sang-Woo
    Jang, Won-Ho
    Cho, Chun-Hyung
    Seo, Kwang-Seok
    Oh, Jungwoo
    Cha, Ho-Young
    [J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (08) : 1090 - 1093
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