A physical-based model for on-chip double-layer spiral inductors with a ground shield

被引:1
作者
Yang, Yintang [1 ]
Lan, Haokun [1 ]
Zhang, Jianqiang [1 ]
Liu, Maliang [1 ]
机构
[1] Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China
关键词
ground shield; on-chip inductance; parameter extraction; skin and proximity effects; PI EQUIVALENT-CIRCUIT; PARAMETER EXTRACTION;
D O I
10.1002/mop.33460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A physical-based analytical model for double-layer inductors to reduce the on-chip area occupied is presented. A simple DC inductance model is developed based on self-inductance and mutual inductance of metal segments. A new method has been adopted to accurately estimate the nonuniform distribution of currents due to skin and proximity effects, and a ladder structure is used to characterize them. Dielectric and substrate electric effects are analyzed, and a ground shield is used to reduce losses. The effective inductance reduction due to the eddy current in the silicon substrate is modeled by a negative mutual inductance between the metal spiral lines and the substrate. All the model parameters can be calculated from the structure sizes and process parameters. On-chip inductors with different parameters were fabricated for the verifications. The EM simulated results and measured results are in good agreement with the proposed model. Thus, it is suitable for different technologies. This model can facilitate the design and optimization of on-chip inductors for RF IC applications.
引用
收藏
页码:87 / 97
页数:11
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