Silicon nitride resistance switching MIS cells doped with silicon atoms

被引：2
作者：
Mavropoulis, A. [1 ,2 ]
Vasileiadis, N. [1 ,2 ]
Bonafos, C. [3 ,4 ]
Normand, P. [1 ]
Ioannou-Sougleridis, V. [1 ]
Sirakoulis, G. Ch. [2 ]
Dimitrakis, P. [1 ]
机构：
[1] NCSR Demokritos, Inst Nanosci & Nanotechnol, Aghia Paraskevi 15341, Greece
[2] Democritus Univ Thrace, Dept Elect & Comp Engn, Xanthi 67100, Greece
[3] CNRS, CEMES, BP94347, F-31055 Toulouse 4, France
[4] Univ Toulouse, BP94347, F-31055 Toulouse 4, France
来源：
SOLID-STATE ELECTRONICS | 2024年 / 213卷
关键词：
Resistance switching Silicon nitride; Poole-Frenkel conduction; RRAM; ReRAM; MIS; POOLE-FRENKEL; DEFECTS;
D O I：
10.1016/j.sse.2023.108851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells characterization is performed to investigate the effect of Si dopants on the switching properties and performance of the fabricated resistive memory cells. In this context extensive dc current-voltage and impedance spectroscopy measurements are carried out systematically and the role of doping in dielectric properties of the nitride films is enlightened. The dc and ac conduction mechanisms are investigated in a comprehensive way. Room temperature retention characteristics of resistive states are also presented.
引用
收藏
页数：5
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