Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

被引:7
作者
Yadav, Shivani [1 ]
Rewari, Sonam [1 ]
机构
[1] Delhi Technol Univ, Elect & Commun Engn Dept, New Delhi 110042, India
关键词
sensors; silicon; electronic devices; nanoscale; high-K dielectric material; HDTG-JAM-GAAFET; gate all around; FIELD-EFFECT TRANSISTOR; TUNNEL FET; SENSITIVITY-ANALYSIS; MOSFET; IMMOBILIZATION; DESIGN; MODEL;
D O I
10.1149/2162-8777/ad161f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure's metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor's output properties, including surface potential, electron concentration, threshold voltage drift (Delta VTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( AVint ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity (SION) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.
引用
收藏
页数:14
相关论文
共 86 条
  • [41] Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs
    Gnudi, A.
    Reggiani, S.
    Gnani, E.
    Baccarani, G.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 336 - 338
  • [42] Dielectric Modulated Junctionless Biotube FET (DM-JL-BT-FET) Bio-Sensor
    Goel, Anubha
    Rewari, Sonam
    Verma, Seema
    Deswal, S. S.
    Gupta, R. S.
    [J]. IEEE SENSORS JOURNAL, 2021, 21 (15) : 16731 - 16743
  • [43] Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL)
    Goel, Anubha
    Rewari, Sonam
    Verma, Seema
    Gupta, R. S.
    [J]. INDIAN JOURNAL OF PHYSICS, 2021, 95 (02) : 299 - 308
  • [44] Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)
    Goel, Anubha
    Rewari, Sonam
    Verma, Seema
    Gupta, R. S.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (05):
  • [45] Goel A, 2018, PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON), P337, DOI 10.1109/EDKCON.2018.8770406
  • [46] Nanogap Field-Effect Transistor Biosensors for Electrical Detection of Avian Influenza
    Gu, Bonsang
    Park, Tae Jung
    Ahn, Jae-Hyuk
    Huang, Xing-Jiu
    Lee, Sang Yup
    Choi, Yang-Kyu
    [J]. SMALL, 2009, 5 (21) : 2407 - 2412
  • [47] A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes
    Gupta, Shourya
    Truesdell, Daniel S.
    Calhoun, Benton H.
    [J]. 2020 IEEE SYMPOSIUM ON VLSI CIRCUITS, 2020,
  • [48] Dielectrically Modulated Source-Engineered Charge-Plasma-Based Schottky-FET as a Label-Free Biosensor
    Hafiz, Syed Adeebul
    Ehteshamuddin, Iltesha M.
    Loan, Sajad A.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (04) : 1905 - 1910
  • [49] A Simulation Study of Gate-All-Around Nanowire Transistor With a Core-Substrate
    Han, Ke
    Zhang, Yannan
    Deng, Zhongliang
    [J]. IEEE ACCESS, 2020, 8 : 62181 - 62190
  • [50] Si/GaAs Hetero Junction Tunnel FET: Design and Investigation
    Haris, Mohd
    Loan, Sajad A.
    Mainuddin
    [J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 14 (10) : 1434 - 1444