Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications

被引:7
作者
Yadav, Shivani [1 ]
Rewari, Sonam [1 ]
机构
[1] Delhi Technol Univ, Elect & Commun Engn Dept, New Delhi 110042, India
关键词
sensors; silicon; electronic devices; nanoscale; high-K dielectric material; HDTG-JAM-GAAFET; gate all around; FIELD-EFFECT TRANSISTOR; TUNNEL FET; SENSITIVITY-ANALYSIS; MOSFET; IMMOBILIZATION; DESIGN; MODEL;
D O I
10.1149/2162-8777/ad161f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The label free detection of various biomolecules associated with different diseases has been proposed in this manuscript using a novel biosensor design named as the Hetero Dielectric Trench Gate Junctionless Accumulation Mode Gate-All-Around FET (HDTG-JAM-GAAFET). This biosensor employs a silicon cylindrical Gate All Around FET which operates in Junctionless Accumulation Mode (JAM) and has a hetero dielectric layer comprised of SiO2 and HfO2. The cylindrical gate structure's metal gate is trenched into the Hafnium oxide dielectric layer, which provides the gate with enhanced control over the surface characteristics of the channel. A Trench Gate architecture in a hetero dielectric Gate All Around FET is emulated for the biosensing for the first time. The HDTG-JAM-GAAFET has been compared to Normal Gate JAM Gate-All-Around FET (NG-JAM-GAAFET) biosensors immobilizing a variety of neutral biomolecules and biomolecules having a range of positive and negative charges. The effect of biomolecules on HDTG-JAM-GAAFET biosensor's output properties, including surface potential, electron concentration, threshold voltage drift (Delta VTH), subthreshold leakage current (IOFF), subthreshold slope (SS), switching ratio (ION/IOFF), ION current sensitivity, transconductance (gm), output conductance (gd), channel resistance (Rch) and intrinsic gain ( AVint ) has been studied. For instance, HDTG-JAM-GAAFET biosensor has drain ON-current sensitivity (SION) which is 67.68% greater for gelatin biomolecules, 69.4% higher for positive biomolecules, and 8% higher for negative biomolecules bound in the nanogap cavity than that of a Normal Gate JAM Gate-All-Around FET. The proposed device exhibits exceptional performance characteristics and it can effectively identify specific biomolecules to diagnose many diseases, such as breast cancer, lung cancer, and numerous viral infections, using their respective biomarkers.
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页数:14
相关论文
共 86 条
  • [1] Modeling and Simulation Investigation of Sensitivity of Symmetric Split Gate Junctionless FET for Biosensing Application
    Ajay
    Narang, Rakhi
    Saxena, Manoj
    Gupta, Mridula
    [J]. IEEE SENSORS JOURNAL, 2017, 17 (15) : 4853 - 4861
  • [2] Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors
    Ajay
    Narang, Rakhi
    Saxena, Manoj
    Gupta, Mridula
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2015, 85 : 557 - 572
  • [3] An overview of biomolecules, immobilization methods and support materials of biosensors
    Asal, Melis
    Ozen, Ozlem
    Sahinler, Mert
    Baysal, Hasan Tahsin
    Polatoglu, Ilker
    [J]. SENSOR REVIEW, 2019, 39 (03) : 377 - 386
  • [4] Performance Analysis of Channel and Inner Gate Engineered GAA Nanowire FET
    Ashima
    Vaithiyanathan, D.
    Raj, Balwinder
    [J]. SILICON, 2021, 13 (06) : 1863 - 1869
  • [5] Design and Performance Assessment of Graded Channel Gate-All-Around Silicon Nanowire FET for Biosensing Applications
    Ashima, Vaithiyanathan
    Dhandapani, Vaithiyanathan
    Raj, Balwinder
    [J]. SILICON, 2023, 15 (08) : 3535 - 3542
  • [6] Ambipolar leakage suppression in electron-hole bilayer TFET: investigation and analysis
    Ashita
    Loan, Sajad A.
    Alharbi, Abdullah G.
    Rafat, Mohammad
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (03) : 977 - 985
  • [7] A High-Performance Inverted-C Tunnel Junction FET With Source-Channel Overlap Pockets
    Ashita
    Loan, Sajad A.
    Rafat, Mohammad
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 763 - 768
  • [8] ATLAS, 2018, User's Manual: 3-D Device Simulator
  • [9] Strain and electric field tuning of semi-metallic character WCrCO2 MXenes with dual narrow band gap
    Bafekry, A.
    Akgenc, B.
    Ghergherehchi, M.
    Peeters, F. M.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 32 (35)
  • [10] Bagga N, 2015, 2015 INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION & AUTOMATION (ICCCA), P1264, DOI 10.1109/CCAA.2015.7148569