Preparation, properties, and electronic applications of 2D Bi2O2Se

被引:15
作者
Chen, Wenjun [1 ]
Zhang, Rongjie [2 ,3 ]
Sun, Yujie [2 ,3 ]
Wang, Jingwei [2 ,3 ]
Fan, Yun [1 ]
Liu, Bilu [2 ,3 ]
机构
[1] Foshan Univ, Sch Elect Informat Engn, Foshan 528000, Peoples R China
[2] Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
[3] Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
来源
ADVANCED POWDER MATERIALS | 2023年 / 2卷 / 01期
关键词
Two-dimensional materials; Preparation; Transfer; Mechanical properties; Electrical properties; Devices; 2-DIMENSIONAL MATERIALS; BISMUTH OXYCHALCOGENIDES; MOBILITY; EXFOLIATION; TRANSISTORS; GRAPHENE;
D O I
10.1016/j.apmate.2022.100080
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) materials offer novel platforms to meet the increasing demands of next-generation mini-aturized electronics. Among them, the recently emerged 2D Bi2O2Se with unique non-van der Waals interlayer interaction, high mobility, sizeable bandgap, and capability to fabricate homologous heterojunction, is of particular interest. In this Review, we introduce recent progress in preparation, transfer, mechanical and electrical properties, and electronic applications of 2D Bi2O2Se. First, we summarize methodologies to synthesize and massively produce 2D Bi2O2Se, as well as recent advances in transferring them from growth substrate to arbitrary substrates. Then, we review current understandings on the intrinsic mechanical properties of Bi2O2Se at 2D thickness limit, and its in-plane and out-of-plane electrical properties. Electronic devices including field-effect transistors, memristors, and sensors based on 2D Bi2O2Se for neuromorphic computing, memory, logic, and in-tegrated circuits are discussed. Finally, challenges and prospects for the development of 2D Bi2O2Se are proposed.
引用
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页数:13
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