An a-IGZO TFT-Based AMOLED Pixel Circuit Employing Stable Mobility Compensation Suppressing Degradation of Detected VTH

被引：6

作者：

Kang, Kyeong-Soo ^{[1
]}

Park, Ji-Hwan ^{[1
]}

Park, Chanjin ^{[1
]}

Lee, Ji-Ho ^{[1
]}

Lee, Soo-Yeon ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷

关键词：

a-IGZO; TFT; pixel circuit; VTH; mobility; compensation; high-PPI; THRESHOLD VOLTAGE; FILM TRANSISTORS; DRIVING SCHEME; TECHNOLOGY;

D O I：

10.1109/JEDS.2023.3331702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose a new active-matrix organic light-emitting diode (AMOLED) pixel circuit using amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The proposed pixel circuit consists of seven TFTs and two capacitors, compensating for both threshold voltage (V-TH)and mobility variations. The simulation results show that the proposed pixel circuit can successfully compensate for mobility variation. Also, the mobility compensation stage positively affects a significant V-TH fluctuation. The proposed circuit is fabricated within an area of 19.95 mu mx39.9 mu m that can achieve 635 pixels per inch (PPI), and the experimental results show relatively consistent current level seven under severe TFT variations.

引用

页码：7 / 13

页数：7

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