3D SOI edge coupler design for high tolerance

被引：6
作者：
Yu, Shengtao [1 ]
Li, Xiaoyu [2 ]
Gui, Chengqun [2 ]
机构：
[1] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
来源：
AIP ADVANCES | 2023年 / 13卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Efficiency - Finite difference time domain method - Optical waveguides - Silicon on insulator technology;
D O I：
10.1063/5.0127979
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We designed and manufactured two single-mode fiber-to-chip three-dimensional (3D) edge couplers with taper and semi-cone structures on a 3.5 mu m silicon device layer of a silicon-on-insulator. The 3D finite-difference time-domain is used to simulate and optimize the structure of the edge couplers within the 1550 nm band. The simulation results reveal a maximum coupling efficiency of the 3D edge couplers above 91.42% for the TE mode. The 3 dB coupling tolerances of the TE mode in horizontal and vertical directions are +/- 4.5 and +/- 1.5 mu m, respectively. Laser-direct-writing grayscale lithography and inductive coupled plasma-reactive ion etching are used in the fabrication of 3D edge couplers. Experimental data show that 3D couplers have a maximum coupling efficiency of about 83.41% in the TE mode.
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页数：7
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