High Gain and Low Power K-Band LNA With Reversed Current-Reuse Topology

被引：3

作者：

Liang, Chenglong ^{[1
]}

Tang, Bingjun ^{[1
]}

Zhao, Ya ^{[1
]}

Xie, Yi ^{[1
]}

Geng, Li ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Current-reuse topology; g(m)-boost technique; K-band; low noise amplifier (LNA); LOW-NOISE AMPLIFIER;

D O I：

10.1109/LMWT.2023.3317781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a K-band low-noise amplifier(LNA) for millimeter-wave (mm-Wave) phased-arrays. A reversed three-stage current-reuse topology with g(m)-boost technique is proposed, which breaks the dilemma of traditional common-gate (CG) LNA facing current limitation and achieves high gain with low power consumption. The proposed LNA is fabricated with a standard 55-nm CMOS process. Measurement results show that 21.8 dB peak gain is achieved within 2.1 GHz bandwidth, while the noise figure (NF) is 4.04 dB. Benefiting from the reversed current-reuse structure, the power consumption of the LNA is only 3.05 mW from a uniform 1.2 V power supply.

引用

页码：1638 / 1641

页数：4

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