High Fill Factor CsPbI2Br Perovskite Solar Cells Via Crystallization Management

被引:44
作者
Jeong, Min Ju [1 ]
Jeon, Soo Woong [1 ]
Kim, Sung Yong [1 ]
Noh, Jun Hong [1 ,2 ,3 ]
机构
[1] Korea Univ, Sch Civil Environm & Architectural Engn, Seoul 02841, South Korea
[2] Korea Univ, KU KIST Green Sch Grad Sch Energy & Environm, Seoul 02841, South Korea
[3] Korea Univ, Dept Integrat Energy Engn, Seoul 02841, South Korea
基金
新加坡国家研究基金会;
关键词
CsPbI2Br; dopant-free; Fill factor; P3HT; stability; MIXED-HALIDE PEROVSKITES; EFFICIENT; SEGREGATION; GROWTH; CATION; LIMIT;
D O I
10.1002/aenm.202300698
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Inorganic CsPbI2Br perovskite has a substantial potential for triple-junction tandem solar cells as a top subcell, however it exhibits relative instability in the air compared with organic-inorganic perovskites as well as significantly lower efficiency than the theoretical efficiency limit. To further enhance the air-stability and efficiency of CsPbI2Br-based perovskite solar cells (PSCs), it is vitally crucial to improve the crystallinity and passivate the defects within films that accelerate the phase transformation to the photo-inactive phase in the air. Here, it is reported that crystallization management via incorporating sodium formate (NaFo) in a CsPbI2Br perovskite solution effectively leads to enlarged grain size and the reduced trap density. The Na+ cation and HOOC- anion produce a synergistic effect for engineering the defects by acting as cation and pseudo-halide anion passivators, respectively. As a result, the NaFo-incorporating device shows an improved power conversion efficiency (PCE) of 17.7% with a fill factor (FF) of 84.5%. To the best of the authors' knowledge, this progressive FF value is the highest value among CsPbI2Br-based PSCs reported thus far. In addition, the NaFo-incorporated device shows improved air stability compared to the control device, retaining over 95% of its initial PCE for 1000 hours under 10% relative humidity at room temperature without any encapsulation.
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页数:9
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