Van der Waals twistronics in a MoS2/WS2 heterostructure

被引:9
|
作者
Sachin, Saurav [1 ]
Kumari, Puja [1 ]
Gupta, Neelam [1 ]
Rani, Shivani [1 ]
Kar, Subhasmita [1 ]
Ray, Soumya Jyoti [1 ]
机构
[1] Indian Inst Technol Patna, Dept Phys, Bihta 801106, India
关键词
2D materials; Transition metal dichalcogenides; Twisted heterostructures; MoS2; WS2; ELASTIC PROPERTIES; WS2;
D O I
10.1016/j.cocom.2023.e00797
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The heterostructure of MoS2/WS2 is chosen as a model system to explore the role of interlayer twist on the structural, electronic, mechanical and optical properties. Extensive first-principles based calculations reveal that the formation of stable heterostructure at certain specific twisted angles at minimal interlayer strain, while the semiconducting phase varies between direct and indirect band gap structure in various configurations. The Young's modulus and Poisson's ratio of the heterostructure are well comparable to that of the individual monolayers, which indicate the flexibility of this heterostructure. Furthermore, the optical properties such as dielectric constant, absorption coefficient and optical conductivity are found to be strongly enhanced with twist, as compared to its constituent monolayers. The combined attributes suggest the usefulness of this heterostructure for optomechanical and optoelectronics applications in phase-tunable twistronics.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation
    Ngoc Thanh Duong
    Lee, Juchan
    Bang, Seungho
    Park, Chulho
    Lim, Seong Chu
    Jeong, Mun Seok
    ACS NANO, 2019, 13 (04) : 4478 - 4485
  • [42] Sputtering and Electron Beam Irradiation of WS2/MoS2 and MoS2/WS2 Heterostructures for Enhanced Photoresponsivity
    Kim, Bong Ho
    Kwon, Soon Hyeong
    Yoon, Hongji
    Kim, Dong Wook
    Yoon, Young Joon
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 1200 - 1203
  • [43] Silicene on MoS2: role of the van der Waals interaction
    Zhu, Jiajie
    Schwingenschloegl, Udo
    2D MATERIALS, 2015, 2 (04):
  • [44] Deterministic Assembly of Arrays of Lithographically Defined WS2 and MoS2 Monolayer Features Directly From Multilayer Sources Into Van Der Waals Heterostructures
    Nguyen, Vu
    Gramling, Hannah
    Towle, Clarissa
    Li, Wan
    Lien, Der-Hsien
    Kim, Hyungjin
    Chrzan, Daryl C.
    Javey, Ali
    Xu, Ke
    Ager, Joel
    Taylor, Hayden
    JOURNAL OF MICRO AND NANO-MANUFACTURING, 2019, 7 (04):
  • [45] Large Surface Photovoltage of WS2/MoS2 and MoS2/WS2 Vertical Hetero-bilayers
    Kim, Bora
    Kim, Jayeong
    Tsai, Po-Cheng
    Choi, Hyeji
    Yoon, Seokhyun
    Lin, Shih-Yen
    Kim, Dong-Wook
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (06) : 2601 - 2606
  • [46] Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure
    Pak, Jinsu
    Lee, Ilmin
    Cho, Kyungjune
    Kim, Jae-Keun
    Jeong, Hyunhak
    Hwang, Wang-Taek
    Ahn, Geun Ho
    Kang, Keehoon
    Yu, Woo Jong
    Javey, Ali
    Chung, Seungjun
    Lee, Takhee
    ACS NANO, 2019, 13 (08) : 9638 - 9646
  • [47] Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions
    Guo, Junnan
    Dai, Xinyue
    Zhang, Lishu
    Li, Hui
    MOLECULES, 2023, 28 (19):
  • [48] Zener Tunneling and Photoresponse of a WS2/Si van der Waals Heterojunction
    Lan, Changyong
    Li, Chun
    Wang, Shuai
    He, Tianying
    Jiao, Tianpeng
    Wei, Dapeng
    Jing, Wenkui
    Li, Luying
    Liu, Yong
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (28) : 18375 - 18382
  • [49] WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment
    Li, Chao
    Yan, Xiao
    Song, Xiongfei
    Bao, Wenzhong
    Ding, Shijin
    Zhang, David Wei
    Zhou, Peng
    NANOTECHNOLOGY, 2017, 28 (41)
  • [50] A two-dimensional MoS2/WSe2 van der Waals heterostructure for enhanced photoelectric performance
    Si, Keyu
    Ma, Jingyao
    Lu, Chunhui
    Zhou, Yixuan
    He, Chuan
    Yang, Dan
    Wang, Xiumin
    Xu, Xinlong
    APPLIED SURFACE SCIENCE, 2020, 507