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Analysis of a novel Si1-xGex/Si heterojunction stacked oxide double-gate tunnel field-effect transistor with asymmetry structure for improved DC and analog/RF performance
被引:0
作者:
Chen, Qing
[1
]
Yang, Lulu
[1
]
Li, Jianwei
[2
]
Liu, Hanxiao
[1
]
Qi, Zengwei
[1
]
Yang, Xiaofeng
[1
]
Chen, Dong
[1
]
He, Wei
[1
]
机构:
[1] Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710121, Peoples R China
[2] Xian Huawei Technol Co Ltd, Nova Prod Line, Xian 710065, Peoples R China
来源:
MICRO AND NANOSTRUCTURES
|
2024年
/
185卷
关键词:
Asymmetry structure;
Heterojunction;
Stacked oxide;
On-state current;
Ambipolar-state;
Analog/RF performance;
FET;
SRAM;
D O I:
10.1016/j.micrna.2023.207722
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
In this work, a novel Si1-xGex/Si heterojunction and stacked oxide doublegate tunnel field-effect transistor with asymmetry structure (ASHJSO-DGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the DC and analog/RF performance of silicon-based double gate tunnel field-effect transistors with asymmetry structure (ASSi-DGTFETs) is also discussed. Compared to ASSi-DGTFETs, ASHJSO-DGTFET maintains lower off/ambipolar-state current and obtains higher on-state current. The simulation results reveal that the on-state current, switching ratio, and minimum SS of the optimal ASHJSO-DGTFET are 5.27 x 10-5 A/mu m, 0.64 x 1012, and 12.3 mV/dec, respectively. Moreover, the maximum gds, gm, integral T and GBW of ASHJSODGTFET are 85 mu S/mu m, 172 mu S/mu m, 54.5 GHz and 9.8 GHz, respectively. Therefore, the proposed ASHJSODGTFET is more suitable for the ultra-low power integrated circuits.
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页数:13
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