Magnesium chalcogenides;
Density functional theory;
Square lattice and hexagonal structure;
Boltzmann transport equations;
PHASE AE(3)ALAS(3) AE;
THERMAL-CONDUCTIVITY;
THIN-FILMS;
POWER;
TRANSITION;
GROWTH;
GENERATORS;
ENERGY;
BULK;
1ST-PRINCIPLE;
D O I:
10.1016/j.cocom.2023.e00836
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
The first principles study of two-dimensional magnesium (Mg) chalcogenides (X = O, S, Se, Te) in square lattice (s-MgX) and hexagonal phases (h-MgX) is investigated for the first time. Except for h-MgSe and h-MgTe, all the square lattice and hexagonal structures in MgX compounds are dynamically stable, agreeing to phonon disper-sion calculations. The electronic band structure and projected density of states of s- and h-MgX materials pro-vided insight into the essence of electronic properties of these compounds. All s- and h-MgX compounds are found to be indirect wide band gap semiconductors, according to calculations using PBE and HSE06 functionals. The effective mass, mobility and relaxation time of electrons and holes carriers from the band structure of s- and h- MgX are examined to acquire a better intuition into these materials. Along the zigzag direction, h-MgTe has a largest mobility as well as relaxation time of 78104.92 cm(2) V(-1)s(-1) and 64385.56 fs, respectively in the entire MgX series. Additionally, we examined their mechanical stability through elastic characteristics, and the derived elastic parameters and polar graphs of Young's modulus and Poisson's ratio verifying their mechanical stability. In application of parallel and perpendicular field polarizations, the optical properties of s- and h-MgX are examined. The thermoelectric properties of the complete s- and h-MgX series are examined for the temperature range from 50 K to 800 K. The results of the present study reveal that s-MgO and h-MgS are the better ther-moelectric materials in the considered series. Finally, since these compounds are mostly UV-active, they may find useful applications in UV-protectant and UV-photodetectors materials.
机构:
College of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou UniversityCollege of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University
丁开宁
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h-index:
机构:
加伟
章永凡
论文数: 0引用数: 0
h-index: 0
机构:
College of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou UniversityCollege of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University
机构:
King Abdulaziz Univ, Rabigh Coll Sci & Arts, Phys Dept, POB 344, Rabigh 21911, Saudi Arabia
King Abdulaziz Univ, Fac Sci, Phys Dept, POB 80203, Jeddah 21589, Saudi ArabiaKing Abdulaziz Univ, Rabigh Coll Sci & Arts, Phys Dept, POB 344, Rabigh 21911, Saudi Arabia
机构:
Vellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, IndiaVellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, India
Sneha, G.
Rueshwin, S. Chellaiya Thomas
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机构:
Vellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, IndiaVellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, India
机构:
College of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou UniversityCollege of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University
丁开宁
论文数: 引用数:
h-index:
机构:
加伟
章永凡
论文数: 0引用数: 0
h-index: 0
机构:
College of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou UniversityCollege of Chemistry and Chemical Engineering, State Key Laboratory Breeding Base of Photocatalysis, Fuzhou University
机构:
King Abdulaziz Univ, Rabigh Coll Sci & Arts, Phys Dept, POB 344, Rabigh 21911, Saudi Arabia
King Abdulaziz Univ, Fac Sci, Phys Dept, POB 80203, Jeddah 21589, Saudi ArabiaKing Abdulaziz Univ, Rabigh Coll Sci & Arts, Phys Dept, POB 344, Rabigh 21911, Saudi Arabia
机构:
Vellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, IndiaVellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, India
Sneha, G.
Rueshwin, S. Chellaiya Thomas
论文数: 0引用数: 0
h-index: 0
机构:
Vellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, IndiaVellore Inst Technol VIT, Sch Adv Sci, Div Phys, Chennai 600127, Tamil Nadu, India