Nitrogen-Related Defects in Crystalline Silicon

被引:3
作者
Sgourou, E. N. [1 ]
Sarlis, N. [1 ]
Chroneos, A. [2 ,3 ]
Londos, C. A. [1 ]
机构
[1] Natl & Kapodistrian Univ Athens, Sect Condensed Matter Phys, Dept Phys, Athens 15784, Greece
[2] Univ Thessaly, Dept Elect & Comp Engn, Volos 38333, Greece
[3] Imperial Coll London, Dept Mat, London SW7 2BP, England
来源
APPLIED SCIENCES-BASEL | 2024年 / 14卷 / 04期
关键词
silicon; nitrogen; intrinsic defects; LOCAL VIBRATIONAL-MODES; OXYGEN COMPLEXES; INFRARED-ABSORPTION; SUBSTITUTIONAL NITROGEN; DEEP-LEVEL; O COMPLEXES; CZOCHRALSKI; PHOTOLUMINESCENCE; CARBON; DIFFUSION;
D O I
10.3390/app14041631
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example Ni, Ns, NiNi, NiNs, NsNs); nitrogen-self-interstitial and nitrogen-vacancy-related complexes (for example NsV, (NiNi)Sii, (NsNs)V); nitrogen-oxygen defects (for example NO, NO2, N2O, N2O2); more extended clusters such as VmN2On (m, n = 1, 2); and nitrogen-carbon defects (for example CiN and CiNO). Both experimental and theoretical investigations are considered as they provide complementary information.
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页数:15
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