Spontaneous charge-ordered state in Bernal-stacked bilayer graphene

被引:0
|
作者
Jiang, Xiu-Cai [1 ]
Song, Ze-Yi [1 ]
Ruan, Ze [1 ]
Zhang, Yu-Zhong [1 ]
机构
[1] Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct Ma, Shanghai 200092, Peoples R China
来源
PHYSICAL REVIEW RESEARCH | 2024年 / 6卷 / 01期
基金
中国国家自然科学基金;
关键词
BROKEN-SYMMETRY STATES; TUNABLE EXCITONS; PHASE; TRANSPORT; BANDGAP;
D O I
10.1103/PhysRevResearch.6.013255
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose that a weakly spontaneous charge-ordered insulating state probably exists in Bernal-stacked bilayer graphene, which can account for experimentally observed nonmonotonic behavior of resistance as a function of the gated field, namely, the gap closes and reopens at a critical gated field. The underlying physics is demonstrated by a simple model on a corresponding lattice that contains the nearest intralayer and interlayer hoppings, electric field, and staggered potential between different sublattices. Combining density functional theory calculations with model analyses, we argue that the interlayer van der Waals interactions cooperating with ripples may be responsible for the staggered potential, which induces a charge-ordered insulating state in the absence of the electric field.
引用
收藏
页数:9
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