Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes

被引：6

作者：

Taylor-Mew, J. ^{[1
]}

Collins, X. ^{[2
]}

White, B. ^{[2
]}

Tan, C. H. ^{[1
]}

Ng, J. S. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, England

[2] Phlux Technol Ltd, Sheffield S3 7HQ, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

Single-photon avalanche diodes; Photonics; Temperature measurement; Voltage measurement; Optical attenuators; Logic gates; Indium phosphide; AlGaAsSb; geiger mode avalanche photodiode (APD); single photon APD; single photon avalanche diode (SPAD); single photon detection efficiency (SPDE); HIGH-SPEED; DIODE; PERFORMANCE; DESIGN; NOISE; INP;

D O I：

10.1109/TED.2024.3354698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Near-infrared linear mode Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes (APDs) exhibit excellent temperature stability, potentially simplifying Geiger mode operation. We have carried out the first experimental evaluation of In0.53Ga0.47As/Al 0.85Ga0.15As0.56Sb0.44 APDs in Geiger mode. Characterization on multiple devices included temperature-dependent dark current, avalanche multiplication, dark count rate (DCR), afterpulsing, and single photon detection efficiency (SPDE). The temperature coefficient of breakdown voltage extracted from avalanche multiplication data was 13.5 mV & sdot;K-1 , much lower than InGaAs/InP Geiger mode APDs, reducing changes in operation voltage and offering possible protection from high optical power thermal attack in communication systems. At 200 K, SPDE were 5%-16% with DCR of 1-20 Mc & sdot;s(-1) , comparable to InAlAs and early InP-based Single Photon APDs. The afterpulsing at 200 K was negligible for hold-off time > 50 mu s (reducing to 5 mu s at 250 K). These are similar to the performance of InGaAs/InAlAs and some InGaAs/InP Geiger mode APDs. The data reported in this article is available from the ORDA digital repository.

引用

页码：1994 / 1998

页数：5