Modeling and algorithm of three-dimensional metrology with critical dimension scanning electron microscope

被引:0
作者
Chen, Delong [1 ,2 ]
Zhou, Jielin [1 ]
Zhang, Yanjun [1 ]
Xiao, Erbo [3 ]
Ge, Jinguo [1 ]
Li, Quantong [1 ]
Liu, Zhuming [1 ]
机构
[1] Guangdong Acad Sci, Inst Semicond, Guangzhou 510651, Peoples R China
[2] South China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510651, Peoples R China
[3] Zunyi Med & Pharmaceut Coll, Zunyi 563006, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2023年 / 41卷 / 06期
关键词
CD-SEM; SIMULATION; LINEWIDTH; BIAS;
D O I
10.1116/6.0003012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To address the challenges of accurate metrology of height and sidewall angle (SWA) of three-dimensional structures with critical dimension scanning electron microscopy, general modeling and algorithms based on tilted electron beam technology and the corresponding application skills are proposed, and the validity and error accuracy are evaluated as well. Three typical structures, the trapezoid, inverted trapezoid, and step, are investigated with Monte Carlo simulation. The maximum derivative method is used to extract key parameters from the secondary electron linescan. The efficiency of the proposed modeling, algorithms, and the accuracy of the calculated height and SWA are improved further with the application of wavelet transform.
引用
收藏
页数:10
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