Effect of RF power on structural, optical and electrical properties of sputtered nickel oxide

被引：15

作者：

Elmassi, S. ^{[1
]}

Bousseta, M. ^{[1
]}

Amiri, L. ^{[1
]}

Drissi, S. ^{[1
]}

Abali, A. ^{[1
]}

Nkhaili, L. ^{[1
]}

Narjis, A. ^{[1
,2
]}

Ammar, A. ^{[3
]}

Outzourhit, A. ^{[1
]}

机构：

[1] Cadi Ayyad Univ, Fac Sci Semlalia, Lab Mat Energy & Environm LaMEE, POB 2390, Marrakech 40000, Morocco

[2] IbnZohr Univ, Natl Sch Appl Sci, Ave Tamesoult, Agadir 80000, Morocco

[3] Univ Cadi Ayyad, Fac Sci Semlalia, Lab Sci Mat & Optimisat Proc SCIMATOP, Ave My Abdellah,BP2390, Marrakech, Morocco

来源：

PHYSICA B-CONDENSED MATTER | 2023年 / 659卷

关键词：

NiO thin Films; RF power; SEM; Band gap; Electrical properties; SURFACE-MORPHOLOGY; SUBSTRATE-TEMPERATURE; THIN-FILMS; GROWTH; THICKNESS; DEPOSITION; NANOWIRES; ZNO;

D O I：

10.1016/j.physb.2023.414853

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this study, we focus on the effect of the radio frequency (RF) sputtering power on the structural, optical and electrical properties of NiO thin films, deposited on glass substrates in the O2/Ar atmosphere. It was observed that by increasing the RF power from 50 to 300 W, the crystallite size increases from 5.5 to 8.28 nm then decreases for 350 W. The thickness increases from 40 to 800 nm as the power increases from 50 W to 300 W, and decreases to 450 nm for 350 W. Raman spectroscopy analyses confirmed the formation of the NiO phase for all RF powers. SEM images exhibited homogenous and no porous surfaces. Besides, the optical transmittance decreases with increasing the RF power, the band gap is in the range 2.68-3.15 eV and the Urbach energy decreases from 8.06 to 2.04 eV with a minimum obtained for 250 W. The minimum electrical resistivity was obtained for the RF power 50 W.

引用

页数：10

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