Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers

被引：8

作者：

Madumelu, Chukwuka ^{[1
,6
]}

Cai, Yalun ^{[1
]}

Hollemann, Christina ^{[2
]}

Peibst, Robby ^{[2
,3
]}

Hoex, Bram ^{[1
]}

Hallam, Brett J. ^{[1
,4
]}

Soeriyadi, Anastasia H. ^{[1
,5
]}

机构：

[1] UNSW, Sch Photovolta & Renewable Energy Engn SPREE, Sydney, NSW 2052, Australia

[2] Inst Solar Energy Res Hamelin ISFH, Ohrberg 1, D-31860 Emmerthal, Germany

[3] Leibniz Univ Hannover, Inst Elect Mat & Devices, Schneiderberg 32, D-30167 Hannover, Germany

[4] ITP Renewables, Christie Spaces, Level 10, 3 Spring St, Sydney, NSW, Australia

[5] Univ Oxford, Dept Mat, Oxford, England

[6] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2033, Australia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2023年 / 253卷

关键词：

TEMPERATURE-INDUCED DEGRADATION; LIMITED HYDROGEN DIFFUSION; N-TYPE; SI; CELLS; LIGHT;

D O I：

10.1016/j.solmat.2023.112245

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polysilicon (poly-Si)-on-oxide passivating contact structures (POLO/TOPCon) enable high-efficiency solar cells as they simultaneously provide a very high level of surface passivation and a high conductance for either electrons or holes. The ease of incorporation with existing manufacturing lines and their tolerance for high-temperature processing has increased the wide acceptance of this structure in the PV industry. In this report, we explore the effects of short high-temperature annealing required for effective hydrogenation and formation of ohmic screen-printed contacts across a wide temperature range (636 degrees C-846 degrees C) on the stability of passivating contact structures. We study this on p-type c-Si substrates with phosphorus-doped (n-type) or boron-doped (p-type) polysilicon contacts capped with either an AlOx or SiNx coating. Our experimental results show that irrespective of the poly-Si doping type, AlOx-capped samples suffer a loss in surface passivation across the investigated temperature range, while SiNx-capped samples show an improvement at lower annealing temperatures. Above 744 degrees C, severely ruptured blisters occur for the samples coated with a SiNx layer, leading to lift-off of the poly layer in extreme cases, and in all cases, significant surface passivation losses, up to 99%. A study of the long-term stability of these fired samples under 1-sun illumination @ 140 degrees C shows that they suffer from both bulk and surface-like instabilities. Two degradation cycles were observed: the first, a boron-oxygen light-induced degradation (BO-LID) observed after 5 min, with capture cross-section ratios of 15.8-19.2, and a slower secondary degradation, similar to light and elevated temperature-induced degradation (LeTID), with maximum degradation reached after similar to 14 days. The presence of a silicon nitride layer does not appear to influence the kinetics of post-degradation recovery. Our results suggest that the effect of firing may be influenced by the polarity of the bulk c-Si or perhaps the chemistry of the SiNx film and highlight that passivating contact structures based on p-type c-Si may offer better long-term stability than those based on n-type c-Si.

引用

页数：12

共 51 条

[21]

JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[22]

Kane D. E., 1985, Conference Record of the Eighteenth IEEE Photovoltaic Specialists Conference - 1985 (Cat. No.86CH2208-7), P578

[23]

Kang D., 2021, FIRING STABILITY POL, DOI [10.1109/PVSC43889.2021.9519080,0701-0705, DOI 10.1109/PVSC43889.2021.9519080,0701-0705]

[24] Comparison of firing stability between p- and n-type polysilicon passivating contacts [J].

Kang, Di ;

Sio, Hang Cheong ;

Stuckelberger, Josua ;

Yan, Di ;

Phang, Sieu Pheng ;

Liu, Rong ;

Truong, Thien N. ;

Le, Tien ;

Nguyen, Hieu T. ;

Zhang, Xinyu ;

Macdonald, Daniel .

PROGRESS IN PHOTOVOLTAICS, 2022, 30 (08) :970-980

[25] Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts [J].

Kang, Di ;

Sio, Hang Cheong ;

Stuckelberger, Josua ;

Liu, Rong ;

Yan, Di ;

Zhang, Xinyu ;

Macdonald, Daniel .

ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (46) :55164-55171

[26] Long-term stability study of the passivation quality of polysilicon-based passivation layers for silicon solar cells [J].

Kang, Di ;

Sio, Hang Cheong ;

Yan, Di ;

Chen, Wenhao ;

Yang, Jie ;

Jin, Jingsheng ;

Zhang, Xinyu ;

Macdonald, Daniel .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 215

[27] Investigation on the light and elevated temperature induced degradation of gallium-doped Cz-Si [J].

Lin, Dehang ;

Hu, Zechen ;

Song, Lihui ;

Yang, Deren ;

Yu, Xuegong .

SOLAR ENERGY, 2021, 225 (225) :407-411

[28] Metallisation of Boron-Doped Polysilicon Layers by Screen Printed Silver Pastes [J].

Mack, Sebastian ;

Schube, Joerg ;

Fellmeth, Tobias ;

Feldmann, Frank ;

Lenes, Martijn ;

Luchies, Jan-Marc .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2017, 11 (12)

[29] Investigation of light-induced degradation in N-Type silicon heterojunction solar cells during illuminated annealing at elevated temperatures [J].

Madumelu, Chukwuka ;

Wright, Brendan ;

Soeriyadi, Anastasia ;

Wright, Matthew ;

Chen, Daniel ;

Hoex, Bram ;

Hallam, Brett .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 218

[30] MODELING OF HYDROGEN DIFFUSION IN N-TYPE AND P-TYPE SILICON [J].

MATHIOT, D .

PHYSICAL REVIEW B, 1989, 40 (08) :5867-5870

← 1 2 3 4 5 6 →