Effects of underlayer on the reduction of graphene oxide through atomic hydrogen annealing and soft X-ray irradiation

被引：1

作者：

Heya, Akira ^{[1
]}

Fujibuchi, Akinori ^{[1
]}

Hirata, Masahiro ^{[1
]}

Kanda, Kazuhiro ^{[2
]}

Matsuo, Yoshiaki ^{[3
]}

Inamoto, Junichi ^{[3
]}

Sumitomo, Koji ^{[1
]}

机构：

[1] Univ Hyogo, Dept Mat & Synchrotron Radiat Engn, Himeji, Hyogo 6712280, Japan

[2] Univ Hyogo, LASTI, 3-1-2 Koto, Ako, Hyogo 6781205, Japan

[3] Univ Hyogo, Dept Appl Chem & Chem Engn, Himeji, Hyogo 6712280, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SC期

关键词：

graphene oxide; reduction; atomic hydrogen; soft X-ray; reduced graphene oxide; SURFACE-MODIFICATION; TRANSPORT; DEPOSITION; SUBSTRATE;

D O I：

10.35848/1347-4065/acac37

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction of graphene oxide (GO) through atomic hydrogen annealing (AHA) and soft X-ray irradiation is investigated using microwell substrates with mu m-sized holes with and without Ni underlayers. The GO film is reduced through AHA at 170 degrees C and soft X-ray irradiation at 150 degrees C. In contrast, some GO films are not only reduced but also amorphized through soft X-ray irradiation. The effect of the Ni underlayer on GO reduction differs between AHA and soft X-ray irradiation. In AHA, the difference in GO reduction between SiO2 and Ni underlayer originates from the atomic hydrogen density on the sample surface. On the other hand, in soft X-ray irradiation, the difference in GO reduction between SiO2 and the Ni underlayer originates from the excited electrons generated by soft X-ray irradiation. Reduction without damage is more likely to occur in the suspended GO than in the supported GO.

引用

页数：8