Intrinsic Stimulated Intense Picosecond Emission in the Amplification Saturation Mode and the "Threshold" State of Electron-Hole Plasma in the AlxGa1-xAs-GaAs-AlxGa1-xAs Heterostructure

The review presents the third part of the experimental study of emission and the optoelectronic effects excited by it. At the beginning of a powerful optical picosecond pumping of the GaAs layer of the AlxGa1 - xAs-GaAs-AlxGa1 - xAs heterostructure, a picosecond emission has occurred in it. It has been experimentally proved that this is amplified spontaneous (stimulated) emission with the propagation specifics in the heterostructure. It has been shown that the electron-hole plasma is maintained in a "threshold" state with an inversion of the electron population in a narrow energy range because of high emission intensity. In this regard, the electron temperature and therefore, their distribution between valleys, etc., becomes uniquely related to their density. It has been found that limiting the inversion meant the emission amplification saturation when the amplification is limited by the energy transport of charge carriers to the levels from which they are forced to recombine. It has been determined that the transport being slowed down by the heating of carriers because of their interaction with emission determines the dynamics of the emission as a whole and its spectral components when the temperature of the carriers is related to their density.