Growth and characterization of Cu-Ni-Sn-S films electrodeposited at different applied potentials

被引：5

作者：

El Khouja, Outman ^{[1
,2
]}

Nouneh, Khalid ^{[2
]}

Touhami, Mohamed Ebn

Matei, Elena ^{[3
]}

Stancu, Viorica ^{[1
]}

Enculescu, Monica ^{[3
]}

Galca, Aurelian Catalin ^{[1
]}

机构：

[1] Natl Inst Mat Phys, Lab Complex Heterostruct & Multifunct Mat HeCoMat, Atomistilor 405A, Magurele 077125, Romania

[2] Ibn Tofail Univ, Fac Sci, Lab Mat Phys & Subatom LPMS, Campus Univ, Kenitra 14000, Morocco

[3] Natl Inst Mat Phys, Lab Funct Nanostruct, Atomistilor 405A, Magurele 077125, Romania

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2023年 / 34卷 / 08期

关键词：

CU2NISNS4; THIN-FILMS; COUNTER ELECTRODES; SECONDARY PHASES; SOLAR-CELLS; CO; PERFORMANCE; MORPHOLOGY; TEMPERATURE; CU2COSNS4; EFFICIENT;

D O I：

10.1007/s10854-023-10173-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu2NiSnS4 (CNTS) absorber layers are elaborated by electrodeposition at various applied potentials followed by sulfurization treatment at 450 degrees C under sulfur atmosphere. The microstructural investigations revealed the presence of Cu4SnS4 secondary phases which can be reduced using an applied potential of -1.15 V vs. Ag/AgCl. Using the corresponding cathodic potential for Ni2+, the competing detrimental hydrogen evolution regresses the morphology and composition. The film with the highest Ni concentration has a band gap of 1.44 eV as inferred from diffuse reflectance data. The Randles cell model is probed by electrochemical impedance spectroscopy.

引用

页数：12

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