Crystallization and Silicon Carbide Formation in Two-Layer Amorphous Silicon-Carbon Films during Electron Irradiation

被引：0

作者：

Sidorov, A. I. ^{[1
]}

Leks, E. Ya. ^{[2
]}

Podsvirov, O. A. ^{[2
]}

Vinogradov, A. Yu. ^{[3
]}

机构：

[1] ITMO Univ, St Petersburg, Russia

[2] Peter Great St Petersburg Polytech Univ, St Petersburg, Russia

[3] Ioffe Inst, St Petersburg, Russia

来源：

TECHNICAL PHYSICS | 2023年 / 68卷 / SUPPL 1期

关键词：

silicon; carbon; silicon carbide; film; structure; electron beam; Raman spectroscopy; DIAMOND-LIKE CARBON; SILVER NANOPARTICLES; BEAM; GLASS; LUMINESCENCE; KINETICS; SPECTRA; PLASMA;

D O I：

10.1134/S106378422309013X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the irradiation by focused electron beam with electron energy of 10 keV of two-layer amorphous silicon-carbon films 60 nm thick results in films partial crystallization. Moreover, in the irradiated zone the layer of crystalline silicon carbide with luminescent properties is formed. The observed effects are confirmed by methods of Raman spectroscopy and by luminescence spectra.

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页码：S115 / S119

页数：5

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