Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

被引:0
|
作者
Yang, Yong [1 ]
Wang, Yongnian [1 ]
Yan, Huaxin [2 ]
Cao, Chenyi [2 ]
Chen, Naichao [2 ,3 ,4 ]
机构
[1] State Grid Gansu Elect Power Co, Inst Elect Power Sci, Lanzhou 730000, Peoples R China
[2] Shanghai Univ Elect Power, Sch Energy & Mech Engn, Shanghai 200090, Peoples R China
[3] Shanghai Key Lab Mat Protect & Adv Mat Elect Powe, Shanghai 200090, Peoples R China
[4] Shanghai Noncarbon Energy Convers & Utilizat Inst, Shanghai 200240, Peoples R China
关键词
diamond film; silicon nitride; CVD; graphene oxide; nitrogen; BEHAVIOR; SPECTRA; SP(3);
D O I
10.3390/ma16175849
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.
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页数:15
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